N2-annealing effects on characteristics of Schottky-barrier MOSFETS

Moongyu Jang; Yarkyeon Kim; Myungsim Jeon; Cheljong Choi; Inbok Baek; Seongjae Lee; Byoungchul Park

doi:10.1109/TED.2006.876575

N₂-annealing effects on characteristics of Schottky-barrier MOSFETS

Moongyu Jang^*
, Yarkyeon Kim
, Myungsim Jeon
, Cheljong Choi
, Inbok Baek
, Seongjae Lee
, Byoungchul Park

^*Corresponding author for this work

Department of Semiconductor Science and Technology

Electronics and Telecommunications Research Institute
Chungnam National University

Research output: Contribution to journal › Journal article › peer-review

28 Scopus citations

Abstract

Schottky-barrier (SB) heights of erbium and platinum silicides are evaluated using current-voltage and capacitance-voltage methods in the Schottky diodes. For the erbium-silicided Schottky diodes, the extracted SB heights show big differences depending on the extraction methods, due to the existence of the interface traps. The interface traps in the erbium silicide are efficiently cured by N₂ annealing. Various sizes of the erbium/platinum-silicided n/p-type SB-MOSFETs are manufactured from 20 μm to 23 nm. Also, N₂ annealing is applied to enhance the SB-MOSFETs' subthreshold characteristics by minimizing the interface-trap density. The manufactured SB-MOSFETs show a good drain-induced barrier thinning and subthreshold swing characteristics, due to the existence of a SB between the source and the channel, which indicates the possible application of the SB-MOSFETs in a nanoscale regime.

Original language	English
Pages (from-to)	1821-1825
Number of pages	5
Journal	IEEE Transactions on Electron Devices
Volume	53
Issue number	8
DOIs	https://doi.org/10.1109/TED.2006.876575
State	Published - 2006.08

Keywords

Drain-induced barrier thinning (DIBT)
Interface trap
SB-MOSFETs
Scaling
Schottky diode
Subthreshold swing (SS)

Access to Document

10.1109/TED.2006.876575

Cite this

@article{525159f418414de1ac88494b2d687b64,

title = "N2-annealing effects on characteristics of Schottky-barrier MOSFETS",

abstract = "Schottky-barrier (SB) heights of erbium and platinum silicides are evaluated using current-voltage and capacitance-voltage methods in the Schottky diodes. For the erbium-silicided Schottky diodes, the extracted SB heights show big differences depending on the extraction methods, due to the existence of the interface traps. The interface traps in the erbium silicide are efficiently cured by N2 annealing. Various sizes of the erbium/platinum-silicided n/p-type SB-MOSFETs are manufactured from 20 μm to 23 nm. Also, N2 annealing is applied to enhance the SB-MOSFETs' subthreshold characteristics by minimizing the interface-trap density. The manufactured SB-MOSFETs show a good drain-induced barrier thinning and subthreshold swing characteristics, due to the existence of a SB between the source and the channel, which indicates the possible application of the SB-MOSFETs in a nanoscale regime.",

keywords = "Drain-induced barrier thinning (DIBT), Interface trap, SB-MOSFETs, Scaling, Schottky diode, Subthreshold swing (SS)",

author = "Moongyu Jang and Yarkyeon Kim and Myungsim Jeon and Cheljong Choi and Inbok Baek and Seongjae Lee and Byoungchul Park",

year = "2006",

month = aug,

doi = "10.1109/TED.2006.876575",

language = "English",

volume = "53",

pages = "1821--1825",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

number = "8",

}

TY - JOUR

T1 - N2-annealing effects on characteristics of Schottky-barrier MOSFETS

AU - Jang, Moongyu

AU - Kim, Yarkyeon

AU - Jeon, Myungsim

AU - Choi, Cheljong

AU - Baek, Inbok

AU - Lee, Seongjae

AU - Park, Byoungchul

PY - 2006/8

Y1 - 2006/8

N2 - Schottky-barrier (SB) heights of erbium and platinum silicides are evaluated using current-voltage and capacitance-voltage methods in the Schottky diodes. For the erbium-silicided Schottky diodes, the extracted SB heights show big differences depending on the extraction methods, due to the existence of the interface traps. The interface traps in the erbium silicide are efficiently cured by N2 annealing. Various sizes of the erbium/platinum-silicided n/p-type SB-MOSFETs are manufactured from 20 μm to 23 nm. Also, N2 annealing is applied to enhance the SB-MOSFETs' subthreshold characteristics by minimizing the interface-trap density. The manufactured SB-MOSFETs show a good drain-induced barrier thinning and subthreshold swing characteristics, due to the existence of a SB between the source and the channel, which indicates the possible application of the SB-MOSFETs in a nanoscale regime.

AB - Schottky-barrier (SB) heights of erbium and platinum silicides are evaluated using current-voltage and capacitance-voltage methods in the Schottky diodes. For the erbium-silicided Schottky diodes, the extracted SB heights show big differences depending on the extraction methods, due to the existence of the interface traps. The interface traps in the erbium silicide are efficiently cured by N2 annealing. Various sizes of the erbium/platinum-silicided n/p-type SB-MOSFETs are manufactured from 20 μm to 23 nm. Also, N2 annealing is applied to enhance the SB-MOSFETs' subthreshold characteristics by minimizing the interface-trap density. The manufactured SB-MOSFETs show a good drain-induced barrier thinning and subthreshold swing characteristics, due to the existence of a SB between the source and the channel, which indicates the possible application of the SB-MOSFETs in a nanoscale regime.

KW - Drain-induced barrier thinning (DIBT)

KW - Interface trap

KW - SB-MOSFETs

KW - Scaling

KW - Schottky diode

KW - Subthreshold swing (SS)

UR - https://www.scopus.com/pages/publications/33746644242

U2 - 10.1109/TED.2006.876575

DO - 10.1109/TED.2006.876575

M3 - Journal article

AN - SCOPUS:33746644242

SN - 0018-9383

VL - 53

SP - 1821

EP - 1825

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 8

ER -

N₂-annealing effects on characteristics of Schottky-barrier MOSFETS

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this