Abstract
We report the numerical analysis of p-GaAs/n-GaAs tunnel junction employing InAs as the intermediate layer at the junction. Incorporation of this intermediate layer introduces an intermediate level at the junction bandgap leading to enhanced tunneling of carriers. By doing so, we obtain a two order of enhancement in the tunnel current. Furthermore, the performance of GaInP/GaAs dual-junction solar cells using the TJ with InAs intermediate layer is calculated under concentrated suns condition and it shows a conversion efficiency exceeding 30% under 1800 suns condition.
| Original language | English |
|---|---|
| Article number | 012178 |
| Journal | Journal of Physics: Conference Series |
| Volume | 490 |
| Issue number | 1 |
| DOIs | |
| State | Published - 2014 |
| Event | 2nd International Conference on Mathematical Modeling in Physical Sciences 2013, IC-MSQUARE 2013 - Prague, Czech Republic Duration: 2013.09.1 → 2013.09.5 |
UN SDGs
This output contributes to the following UN Sustainable Development Goals (SDGs)
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SDG 7 Affordable and Clean Energy
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