Observation and tunability of room temperature photoluminescence of GaAs/GaInAs core-multiple-quantum-well shell nanowire structure grown on Si (100) by molecular beam epitaxy

Kwang Wook Park; Chang Young Park; Sooraj Ravindran; Ja Soon Jang; Yong Ryun Jo; Bong Joong Kim; Yong Tak Lee

doi:10.1186/1556-276X-9-626

Observation and tunability of room temperature photoluminescence of GaAs/GaInAs core-multiple-quantum-well shell nanowire structure grown on Si (100) by molecular beam epitaxy

Kwang Wook Park
, Chang Young Park
, Sooraj Ravindran
, Ja Soon Jang
, Yong Ryun Jo
, Bong Joong Kim
, Yong Tak Lee^*

^*Corresponding author for this work

Electronic Materials Engineering

Gwangju Institute of Science and Technology
Samsung
Yeungnam University

Research output: Contribution to journal › Journal article › peer-review

7 Scopus citations

Abstract

We report the observation of room temperature photoluminescence (PL) emission from GaAs/GaInAs core-multiple-quantum-well (MQW) shell nanowires (NWs) surrounded by AlGaAs grown by molecular beam epitaxy (MBE) using a self-catalyzed technique. PL spectra of the sample show two PL peaks, originating from the GaAs core NWs and the GaInAs MQW shells. The PL peak from the shell structure red-shifts with increasing well width, and the peak position can be tuned by adjusting the width of the MQW shell. The GaAs/GaInAs core-MQW shell NW surrounded by AlGaAs also shows an enhanced PL intensity due to the improved carrier confinement owing to the presence of an AlGaAs clad layer. The inclined growth of the GaAs NWs produces a core-MQW shell structure having a different PL peak position than that of planar QWs. The PL emission by MQW shell and the ability to tune the PL peak position by varying the shell width make such core-shell NWs highly attractive for realizing next generation ultrasmall light sources and other optoelectronics devices.

PACS: 81.07.Gf; 81.15.Hi; 78.55.Cr.

Original language	English
Article number	626
Journal	Nanoscale Research Letters
Volume	9
Issue number	1
DOIs	https://doi.org/10.1186/1556-276X-9-626
State	Published - 2014

Keywords

Core-shell nanowire
GaAs/GaInAs multiple-quantum-well
Molecular beam epitaxy

Access to Document

10.1186/1556-276X-9-626

Cite this

@article{dda9bea8503247ee90ca3bec4200f7ec,

title = "Observation and tunability of room temperature photoluminescence of GaAs/GaInAs core-multiple-quantum-well shell nanowire structure grown on Si (100) by molecular beam epitaxy",

abstract = "We report the observation of room temperature photoluminescence (PL) emission from GaAs/GaInAs core-multiple-quantum-well (MQW) shell nanowires (NWs) surrounded by AlGaAs grown by molecular beam epitaxy (MBE) using a self-catalyzed technique. PL spectra of the sample show two PL peaks, originating from the GaAs core NWs and the GaInAs MQW shells. The PL peak from the shell structure red-shifts with increasing well width, and the peak position can be tuned by adjusting the width of the MQW shell. The GaAs/GaInAs core-MQW shell NW surrounded by AlGaAs also shows an enhanced PL intensity due to the improved carrier confinement owing to the presence of an AlGaAs clad layer. The inclined growth of the GaAs NWs produces a core-MQW shell structure having a different PL peak position than that of planar QWs. The PL emission by MQW shell and the ability to tune the PL peak position by varying the shell width make such core-shell NWs highly attractive for realizing next generation ultrasmall light sources and other optoelectronics devices.PACS: 81.07.Gf; 81.15.Hi; 78.55.Cr.",

keywords = "Core-shell nanowire, GaAs/GaInAs multiple-quantum-well, Molecular beam epitaxy",

author = "Park, \{Kwang Wook\} and Park, \{Chang Young\} and Sooraj Ravindran and Jang, \{Ja Soon\} and Jo, \{Yong Ryun\} and Kim, \{Bong Joong\} and Lee, \{Yong Tak\}",

note = "Publisher Copyright: {\textcopyright} 2014, Park et al.; licensee Springer.",

year = "2014",

doi = "10.1186/1556-276X-9-626",

language = "English",

volume = "9",

journal = "Nanoscale Research Letters",

issn = "1931-7573",

number = "1",

}

Observation and tunability of room temperature photoluminescence of GaAs/GaInAs core-multiple-quantum-well shell nanowire structure grown on Si (100) by molecular beam epitaxy. / Park, Kwang Wook; Park, Chang Young; Ravindran, Sooraj et al.
In: Nanoscale Research Letters, Vol. 9, No. 1, 626, 2014.

Research output: Contribution to journal › Journal article › peer-review

TY - JOUR

T1 - Observation and tunability of room temperature photoluminescence of GaAs/GaInAs core-multiple-quantum-well shell nanowire structure grown on Si (100) by molecular beam epitaxy

AU - Park, Kwang Wook

AU - Park, Chang Young

AU - Ravindran, Sooraj

AU - Jang, Ja Soon

AU - Jo, Yong Ryun

AU - Kim, Bong Joong

AU - Lee, Yong Tak

PY - 2014

Y1 - 2014

N2 - We report the observation of room temperature photoluminescence (PL) emission from GaAs/GaInAs core-multiple-quantum-well (MQW) shell nanowires (NWs) surrounded by AlGaAs grown by molecular beam epitaxy (MBE) using a self-catalyzed technique. PL spectra of the sample show two PL peaks, originating from the GaAs core NWs and the GaInAs MQW shells. The PL peak from the shell structure red-shifts with increasing well width, and the peak position can be tuned by adjusting the width of the MQW shell. The GaAs/GaInAs core-MQW shell NW surrounded by AlGaAs also shows an enhanced PL intensity due to the improved carrier confinement owing to the presence of an AlGaAs clad layer. The inclined growth of the GaAs NWs produces a core-MQW shell structure having a different PL peak position than that of planar QWs. The PL emission by MQW shell and the ability to tune the PL peak position by varying the shell width make such core-shell NWs highly attractive for realizing next generation ultrasmall light sources and other optoelectronics devices.PACS: 81.07.Gf; 81.15.Hi; 78.55.Cr.

AB - We report the observation of room temperature photoluminescence (PL) emission from GaAs/GaInAs core-multiple-quantum-well (MQW) shell nanowires (NWs) surrounded by AlGaAs grown by molecular beam epitaxy (MBE) using a self-catalyzed technique. PL spectra of the sample show two PL peaks, originating from the GaAs core NWs and the GaInAs MQW shells. The PL peak from the shell structure red-shifts with increasing well width, and the peak position can be tuned by adjusting the width of the MQW shell. The GaAs/GaInAs core-MQW shell NW surrounded by AlGaAs also shows an enhanced PL intensity due to the improved carrier confinement owing to the presence of an AlGaAs clad layer. The inclined growth of the GaAs NWs produces a core-MQW shell structure having a different PL peak position than that of planar QWs. The PL emission by MQW shell and the ability to tune the PL peak position by varying the shell width make such core-shell NWs highly attractive for realizing next generation ultrasmall light sources and other optoelectronics devices.PACS: 81.07.Gf; 81.15.Hi; 78.55.Cr.

KW - Core-shell nanowire

KW - GaAs/GaInAs multiple-quantum-well

KW - Molecular beam epitaxy

UR - https://www.scopus.com/pages/publications/84915796612

U2 - 10.1186/1556-276X-9-626

DO - 10.1186/1556-276X-9-626

M3 - Journal article

AN - SCOPUS:84915796612

SN - 1931-7573

VL - 9

JO - Nanoscale Research Letters

JF - Nanoscale Research Letters

IS - 1

M1 - 626

ER -

Observation and tunability of room temperature photoluminescence of GaAs/GaInAs core-multiple-quantum-well shell nanowire structure grown on Si (100) by molecular beam epitaxy

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this