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Observation of a nonmagnetic hard gap in amorphous in/inOx films in the hopping regime

  • Ju Jin Kim*
  • , Hu Jong Lee
  • *Corresponding author for this work
  • Pohang University of Science and Technology
  • Research Institute of Industrial Science & Technology, Pohang

Research output: Contribution to journalJournal articlepeer-review

Abstract

We measured low temperature conduction characteristics of amorphous indium/indium-oxide composite films deep in the insulating regime. Upon lowering temperature, resistance crosses over from an Efros-Shklovskii variable-range-hopping conduction to a simple activation conduction, with parameters in good agreement with the picture of hardening of a parabolic Coulomb gap near the Fermi level. In contrast to the previous observations in magnetic materials, however, the hard gap in our films is extremely insensitive to a magnetic field, which strongly indicates a nonmagnetic nature of the hard gap.

Original languageEnglish
Pages (from-to)2798-2801
Number of pages4
JournalPhysical Review Letters
Volume70
Issue number18
DOIs
StatePublished - 1993

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