Observation of electric and magnetic properties in a diluted magnetic semiconductor GaMnAs/GaAs (111)

C. S. Park; H. K. Choi; C. U. Yang; Y. D. Park; J. Y. Son; Yoon Shon

doi:10.1016/j.jcrysgro.2011.09.054

Observation of electric and magnetic properties in a diluted magnetic semiconductor GaMnAs/GaAs (111)

C. S. Park^*
, H. K. Choi
, C. U. Yang
, Y. D. Park
, J. Y. Son
, Yoon Shon

^*Corresponding author for this work

Department of Physics

Korea University
Seoul National University
Kyung Hee University
Dongguk University

Research output: Contribution to journal › Journal article › peer-review

2 Scopus citations

Abstract

We report on the ferroelectric and ferromagnetic behaviors of a Mn doped GaAs epilayer grown on a GaAs (111) substrate by molecular beam epitaxy. We investigated the structural, electrical, and ferromagnetic properties of the Mn doped GaAs epilayer by high resolution x-ray diffraction, anomalous Hall effect, and superconducting quantum interference device measurements. We obtained the ferromagnetic and ferroelectric Curie temperature to be 50 K and 350 K, respectively, which were confirmed by the anomalous Hall effect, temperature dependence of magnetization, and tan δ vs. temperature. Furthermore, we demonstrated ferroelectric switching behaviors of the Mn doped GaAs epilayer by electric force microscopy.

Original language	English
Pages (from-to)	20-23
Number of pages	4
Journal	Journal of Crystal Growth
Volume	336
Issue number	1
DOIs	https://doi.org/10.1016/j.jcrysgro.2011.09.054
State	Published - 2011.12.1

Keywords

A3. Molecular beam epitaxy
B2. Ferroelectric
B2. Ferromagnetic
B2. GaAs

Access to Document

10.1016/j.jcrysgro.2011.09.054

Cite this

@article{96c7c9d10da448cba665f82bfdfbc702,

title = "Observation of electric and magnetic properties in a diluted magnetic semiconductor GaMnAs/GaAs (111)",

abstract = "We report on the ferroelectric and ferromagnetic behaviors of a Mn doped GaAs epilayer grown on a GaAs (111) substrate by molecular beam epitaxy. We investigated the structural, electrical, and ferromagnetic properties of the Mn doped GaAs epilayer by high resolution x-ray diffraction, anomalous Hall effect, and superconducting quantum interference device measurements. We obtained the ferromagnetic and ferroelectric Curie temperature to be 50 K and 350 K, respectively, which were confirmed by the anomalous Hall effect, temperature dependence of magnetization, and tan δ vs. temperature. Furthermore, we demonstrated ferroelectric switching behaviors of the Mn doped GaAs epilayer by electric force microscopy.",

keywords = "A3. Molecular beam epitaxy, B2. Ferroelectric, B2. Ferromagnetic, B2. GaAs",

author = "Park, \{C. S.\} and Choi, \{H. K.\} and Yang, \{C. U.\} and Park, \{Y. D.\} and Son, \{J. Y.\} and Yoon Shon",

year = "2011",

month = dec,

day = "1",

doi = "10.1016/j.jcrysgro.2011.09.054",

language = "English",

volume = "336",

pages = "20--23",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

number = "1",

}

TY - JOUR

T1 - Observation of electric and magnetic properties in a diluted magnetic semiconductor GaMnAs/GaAs (111)

AU - Park, C. S.

AU - Choi, H. K.

AU - Yang, C. U.

AU - Park, Y. D.

AU - Son, J. Y.

AU - Shon, Yoon

PY - 2011/12/1

Y1 - 2011/12/1

N2 - We report on the ferroelectric and ferromagnetic behaviors of a Mn doped GaAs epilayer grown on a GaAs (111) substrate by molecular beam epitaxy. We investigated the structural, electrical, and ferromagnetic properties of the Mn doped GaAs epilayer by high resolution x-ray diffraction, anomalous Hall effect, and superconducting quantum interference device measurements. We obtained the ferromagnetic and ferroelectric Curie temperature to be 50 K and 350 K, respectively, which were confirmed by the anomalous Hall effect, temperature dependence of magnetization, and tan δ vs. temperature. Furthermore, we demonstrated ferroelectric switching behaviors of the Mn doped GaAs epilayer by electric force microscopy.

AB - We report on the ferroelectric and ferromagnetic behaviors of a Mn doped GaAs epilayer grown on a GaAs (111) substrate by molecular beam epitaxy. We investigated the structural, electrical, and ferromagnetic properties of the Mn doped GaAs epilayer by high resolution x-ray diffraction, anomalous Hall effect, and superconducting quantum interference device measurements. We obtained the ferromagnetic and ferroelectric Curie temperature to be 50 K and 350 K, respectively, which were confirmed by the anomalous Hall effect, temperature dependence of magnetization, and tan δ vs. temperature. Furthermore, we demonstrated ferroelectric switching behaviors of the Mn doped GaAs epilayer by electric force microscopy.

KW - A3. Molecular beam epitaxy

KW - B2. Ferroelectric

KW - B2. Ferromagnetic

KW - B2. GaAs

UR - https://www.scopus.com/pages/publications/80255127449

U2 - 10.1016/j.jcrysgro.2011.09.054

DO - 10.1016/j.jcrysgro.2011.09.054

M3 - Journal article

AN - SCOPUS:80255127449

SN - 0022-0248

VL - 336

SP - 20

EP - 23

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1

ER -

Observation of electric and magnetic properties in a diluted magnetic semiconductor GaMnAs/GaAs (111)

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this