Abstract
AlGaN-containing ultraviolet light-emitting diodes (UV LEDs) emitting at 285 nm show abnormal diode characteristics below the sub-threshold input voltage region, indicating the existence of a space-charge-limited (SCL) current. Distinct transitions from Ohmic to SCL and further diode currents are observed in UV LEDs, unlike GaInN-based LEDs. Under varied temperatures, the transition voltages from Ohmic to SCL currents and the exponents of the power functions in the current–voltage dependency are influenced by the deactivated trap density in the AlGaN film, indicating that the charge injection and compensation limit for the current within the films in the low-voltage regimes for nitride-based UV LEDs.
| Original language | English |
|---|---|
| Pages (from-to) | 217-219 |
| Number of pages | 3 |
| Journal | Materials Letters |
| Volume | 214 |
| DOIs | |
| State | Published - 2018.03.1 |
Keywords
- AlGaN
- Light-emitting diode
- Space charge limited current
- Ultraviolet
Quacquarelli Symonds(QS) Subject Topics
- Engineering - Mechanical
- Materials Science
- Physics & Astronomy
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