Ohmic contact mechanism for Ni/C-Faced 4H-n-SiC Substrate
- Seongjun Kim
- , Hong Ki Kim
- , Minwho Lim
- , Seonghoon Jeong
- , Min Jae Kang
- , Min Sik Kang
- , Nam Suk Lee
- , Tran Viet Cuong
- , Hyunsoo Kim
- , Tobias Erlbacher
- , Anton Bauer
- , Hoon Kyu Shin*
*Corresponding author for this work
- Pohang University of Science and Technology
- Fraunhofer Institute for Integrated Systems and Device Technology
- Jeonbuk National University
- Nguyen Tat Thanh University
Research output: Contribution to journal › Journal article › peer-review
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