On the symmetry of efficiency-versus-carrier-concentration curves in GaInN/GaN light-emitting diodes and relation to droop-causing mechanisms

Qi Dai; Qifeng Shan; Jaehee Cho; E. Fred Schubert; Mary H. Crawford; Daniel D. Koleske; Min Ho Kim; Yongjo Park

On the symmetry of efficiency-versus-carrier-concentration curves in GaInN/GaN light-emitting diodes and relation to droop-causing mechanisms

Qi Dai^*
, Qifeng Shan
, Jaehee Cho
, E. Fred Schubert
, Mary H. Crawford
, Daniel D. Koleske
, Min Ho Kim
, Yongjo Park

^*Corresponding author for this work

Department of Semiconductor Science and Technology

Rensselaer Polytechnic Institute
Sandia National Laboratories, New Mexico
Samsung

Research output: Contribution to conference › Conference paper › peer-review

2 Scopus citations

Abstract

The ABC model (without and with phase-space filling) predicts IQE-versus-n curves of GaInN light-emitting diodes that have even symmetry. Analysis of IQE-versus-n curves shows the need for a carrier leakage term to explain the droop.

Original language	English
Title of host publication	2011 Conference on Lasers and Electro-Optics
Subtitle of host publication	Laser Science to Photonic Applications, CLEO 2011
State	Published - 2011
Event	2011 Conference on Lasers and Electro-Optics, CLEO 2011 - Baltimore, MD, United States Duration: 2011.05.1 → 2011.05.6

Publication series

Name	2011 Conference on Lasers and Electro-Optics: Laser Science to Photonic Applications, CLEO 2011

Conference

Conference	2011 Conference on Lasers and Electro-Optics, CLEO 2011
Country/Territory	United States
City	Baltimore, MD
Period	11.05.1 → 11.05.6

Cite this

Dai, Q., Shan, Q., Cho, J., Schubert, E. F., Crawford, M. H., Koleske, D. D., Kim, M. H., & Park, Y. (2011). On the symmetry of efficiency-versus-carrier-concentration curves in GaInN/GaN light-emitting diodes and relation to droop-causing mechanisms. In 2011 Conference on Lasers and Electro-Optics: Laser Science to Photonic Applications, CLEO 2011 Article 5950733 (2011 Conference on Lasers and Electro-Optics: Laser Science to Photonic Applications, CLEO 2011).

Dai, Qi ; Shan, Qifeng ; Cho, Jaehee et al. / On the symmetry of efficiency-versus-carrier-concentration curves in GaInN/GaN light-emitting diodes and relation to droop-causing mechanisms. 2011 Conference on Lasers and Electro-Optics: Laser Science to Photonic Applications, CLEO 2011. 2011. (2011 Conference on Lasers and Electro-Optics: Laser Science to Photonic Applications, CLEO 2011).

@inproceedings{e46a3db197e2464f9357076057943268,

title = "On the symmetry of efficiency-versus-carrier-concentration curves in GaInN/GaN light-emitting diodes and relation to droop-causing mechanisms",

abstract = "The ABC model (without and with phase-space filling) predicts IQE-versus-n curves of GaInN light-emitting diodes that have even symmetry. Analysis of IQE-versus-n curves shows the need for a carrier leakage term to explain the droop.",

author = "Qi Dai and Qifeng Shan and Jaehee Cho and Schubert, \{E. Fred\} and Crawford, \{Mary H.\} and Koleske, \{Daniel D.\} and Kim, \{Min Ho\} and Yongjo Park",

year = "2011",

language = "English",

isbn = "9781557529107",

series = "2011 Conference on Lasers and Electro-Optics: Laser Science to Photonic Applications, CLEO 2011",

booktitle = "2011 Conference on Lasers and Electro-Optics",

note = "2011 Conference on Lasers and Electro-Optics, CLEO 2011 ; Conference date: 01-05-2011 Through 06-05-2011",

}

Dai, Q, Shan, Q, Cho, J, Schubert, EF, Crawford, MH, Koleske, DD, Kim, MH & Park, Y 2011, On the symmetry of efficiency-versus-carrier-concentration curves in GaInN/GaN light-emitting diodes and relation to droop-causing mechanisms. in 2011 Conference on Lasers and Electro-Optics: Laser Science to Photonic Applications, CLEO 2011., 5950733, 2011 Conference on Lasers and Electro-Optics: Laser Science to Photonic Applications, CLEO 2011, 2011 Conference on Lasers and Electro-Optics, CLEO 2011, Baltimore, MD, United States, 11.05.1.

On the symmetry of efficiency-versus-carrier-concentration curves in GaInN/GaN light-emitting diodes and relation to droop-causing mechanisms. / Dai, Qi; Shan, Qifeng; Cho, Jaehee et al.
2011 Conference on Lasers and Electro-Optics: Laser Science to Photonic Applications, CLEO 2011. 2011. 5950733 (2011 Conference on Lasers and Electro-Optics: Laser Science to Photonic Applications, CLEO 2011).

Research output: Contribution to conference › Conference paper › peer-review

TY - GEN

T1 - On the symmetry of efficiency-versus-carrier-concentration curves in GaInN/GaN light-emitting diodes and relation to droop-causing mechanisms

AU - Dai, Qi

AU - Shan, Qifeng

AU - Cho, Jaehee

AU - Schubert, E. Fred

AU - Crawford, Mary H.

AU - Koleske, Daniel D.

AU - Kim, Min Ho

AU - Park, Yongjo

PY - 2011

Y1 - 2011

N2 - The ABC model (without and with phase-space filling) predicts IQE-versus-n curves of GaInN light-emitting diodes that have even symmetry. Analysis of IQE-versus-n curves shows the need for a carrier leakage term to explain the droop.

AB - The ABC model (without and with phase-space filling) predicts IQE-versus-n curves of GaInN light-emitting diodes that have even symmetry. Analysis of IQE-versus-n curves shows the need for a carrier leakage term to explain the droop.

UR - https://www.scopus.com/pages/publications/80052133186

M3 - Conference paper

AN - SCOPUS:80052133186

SN - 9781557529107

T3 - 2011 Conference on Lasers and Electro-Optics: Laser Science to Photonic Applications, CLEO 2011

BT - 2011 Conference on Lasers and Electro-Optics

T2 - 2011 Conference on Lasers and Electro-Optics, CLEO 2011

Y2 - 1 May 2011 through 6 May 2011

ER -

Dai Q, Shan Q, Cho J, Schubert EF, Crawford MH, Koleske DD et al. On the symmetry of efficiency-versus-carrier-concentration curves in GaInN/GaN light-emitting diodes and relation to droop-causing mechanisms. In 2011 Conference on Lasers and Electro-Optics: Laser Science to Photonic Applications, CLEO 2011. 2011. 5950733. (2011 Conference on Lasers and Electro-Optics: Laser Science to Photonic Applications, CLEO 2011).

On the symmetry of efficiency-versus-carrier-concentration curves in GaInN/GaN light-emitting diodes and relation to droop-causing mechanisms

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