On the symmetry of efficiency-versus-carrier-concentration curves in GaInN/GaN light-emitting diodes and relation to droop-causing mechanisms

Qi Dai; Qifeng Shan; Jaehee Cho; E. Fred Chubert; Mary H. Crawford; Daniel D. Koleske; Min Ho Kim; Yongjo Park

doi:10.1364/cleo_si.2011.cwf3

On the symmetry of efficiency-versus-carrier-concentration curves in GaInN/GaN light-emitting diodes and relation to droop-causing mechanisms

Qi Dai
, Qifeng Shan
, Jaehee Cho
, E. Fred Chubert^*
, Mary H. Crawford
, Daniel D. Koleske
, Min Ho Kim
, Yongjo Park

^*Corresponding author for this work

Department of Semiconductor Science and Technology

Rensselaer Polytechnic Institute
Sandia National Laboratories, New Mexico
Samsung

Research output: Contribution to conference › Conference paper › peer-review

Abstract

The ABC model (without and with phase-space filling) predicts IQE-versus-n curves of GaInN light-emitting diodes that have even symmetry. Analysis of IQE-versus-n curves shows the need for a carrier leakage term to explain the droop.

Original language	English
Title of host publication	CLEO
Subtitle of host publication	Science and Innovations, CLEO_SI 2011
Publisher	Optical Society of America (OSA)
ISBN (Print)	9781557529107
DOIs	https://doi.org/10.1364/cleo_si.2011.cwf3
State	Published - 2011
Event	CLEO: Science and Innovations, CLEO_SI 2011 - Baltimore, MD, United States Duration: 2011.05.1 → 2011.05.6

Publication series

Name	Optics InfoBase Conference Papers
ISSN (Electronic)	2162-2701

Conference

Conference	CLEO: Science and Innovations, CLEO_SI 2011
Country/Territory	United States
City	Baltimore, MD
Period	11.05.1 → 11.05.6

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10.1364/cleo_si.2011.cwf3

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Dai, Q., Shan, Q., Cho, J., Chubert, E. F., Crawford, M. H., Koleske, D. D., Kim, M. H., & Park, Y. (2011). On the symmetry of efficiency-versus-carrier-concentration curves in GaInN/GaN light-emitting diodes and relation to droop-causing mechanisms. In CLEO: Science and Innovations, CLEO_SI 2011 (Optics InfoBase Conference Papers). Optical Society of America (OSA). https://doi.org/10.1364/cleo_si.2011.cwf3

@inproceedings{4d0eb101132b4b09aaae59040b2c3276,

title = "On the symmetry of efficiency-versus-carrier-concentration curves in GaInN/GaN light-emitting diodes and relation to droop-causing mechanisms",

abstract = "The ABC model (without and with phase-space filling) predicts IQE-versus-n curves of GaInN light-emitting diodes that have even symmetry. Analysis of IQE-versus-n curves shows the need for a carrier leakage term to explain the droop.",

author = "Qi Dai and Qifeng Shan and Jaehee Cho and Chubert, \{E. Fred\} and Crawford, \{Mary H.\} and Koleske, \{Daniel D.\} and Kim, \{Min Ho\} and Yongjo Park",

year = "2011",

doi = "10.1364/cleo\_si.2011.cwf3",

language = "English",

isbn = "9781557529107",

series = "Optics InfoBase Conference Papers",

publisher = "Optical Society of America (OSA)",

booktitle = "CLEO",

note = "CLEO: Science and Innovations, CLEO\_SI 2011 ; Conference date: 01-05-2011 Through 06-05-2011",

}

Dai, Q, Shan, Q, Cho, J, Chubert, EF, Crawford, MH, Koleske, DD, Kim, MH & Park, Y 2011, On the symmetry of efficiency-versus-carrier-concentration curves in GaInN/GaN light-emitting diodes and relation to droop-causing mechanisms. in CLEO: Science and Innovations, CLEO_SI 2011. Optics InfoBase Conference Papers, Optical Society of America (OSA), CLEO: Science and Innovations, CLEO_SI 2011, Baltimore, MD, United States, 11.05.1. https://doi.org/10.1364/cleo_si.2011.cwf3

On the symmetry of efficiency-versus-carrier-concentration curves in GaInN/GaN light-emitting diodes and relation to droop-causing mechanisms. / Dai, Qi; Shan, Qifeng; Cho, Jaehee et al.
CLEO: Science and Innovations, CLEO_SI 2011. Optical Society of America (OSA), 2011. (Optics InfoBase Conference Papers).

Research output: Contribution to conference › Conference paper › peer-review

TY - GEN

T1 - On the symmetry of efficiency-versus-carrier-concentration curves in GaInN/GaN light-emitting diodes and relation to droop-causing mechanisms

AU - Dai, Qi

AU - Shan, Qifeng

AU - Cho, Jaehee

AU - Chubert, E. Fred

AU - Crawford, Mary H.

AU - Koleske, Daniel D.

AU - Kim, Min Ho

AU - Park, Yongjo

PY - 2011

Y1 - 2011

N2 - The ABC model (without and with phase-space filling) predicts IQE-versus-n curves of GaInN light-emitting diodes that have even symmetry. Analysis of IQE-versus-n curves shows the need for a carrier leakage term to explain the droop.

AB - The ABC model (without and with phase-space filling) predicts IQE-versus-n curves of GaInN light-emitting diodes that have even symmetry. Analysis of IQE-versus-n curves shows the need for a carrier leakage term to explain the droop.

UR - https://www.scopus.com/pages/publications/85087598719

U2 - 10.1364/cleo_si.2011.cwf3

DO - 10.1364/cleo_si.2011.cwf3

M3 - Conference paper

AN - SCOPUS:85087598719

SN - 9781557529107

T3 - Optics InfoBase Conference Papers

BT - CLEO

PB - Optical Society of America (OSA)

T2 - CLEO: Science and Innovations, CLEO_SI 2011

Y2 - 1 May 2011 through 6 May 2011

ER -

On the symmetry of efficiency-versus-carrier-concentration curves in GaInN/GaN light-emitting diodes and relation to droop-causing mechanisms

Abstract

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