On the temperature dependence of electron leakage from the active region of GaInN/GaN light-emitting diodes

Reduction in the light-output power in GaN-based light-emitting diodes (LEDs) with increasing temperature is a well-known phenomenon. In this work, temperature dependent external-quantum-efficiency versus current curves are measured, and the mechanisms of recombination are discussed. Shockley-Read-Hall recombination increases with temperature and is found to greatly reduce the light output at low current densities. However, this fails to explain the drop in light-output power at high current densities. At typical current density (35 A/cm²), as temperature increases, our results are consistent with increased Shockley-Read-Hall recombination and increased electron leakage from the active region. Both of these effects contribute to the reduction in light-output power in GaInN/GaN LEDs at high temperatures.