Onset of the Efficiency Droop in GaInN Quantum Well Light-Emitting Diodes under Photoluminescence and Electroluminescence Excitation

Guan Bo Lin; E. Fred Schubert; Jaehee Cho; Jun Hyuk Park; Jong Kyu Kim

doi:10.1021/acsphotonics.5b00305

Onset of the Efficiency Droop in GaInN Quantum Well Light-Emitting Diodes under Photoluminescence and Electroluminescence Excitation

Guan Bo Lin^*
, E. Fred Schubert
, Jaehee Cho
, Jun Hyuk Park
, Jong Kyu Kim

^*Corresponding author for this work

Department of Semiconductor Science and Technology

Rensselaer Polytechnic Institute
Pohang University of Science and Technology

Research output: Contribution to journal › Journal article › peer-review

21 Scopus citations

Abstract

The efficiency of Ga_0.87In_0.13N/GaN single and multiple quantum well (QW) light-emitting diodes is investigated under photoluminescence (PL) and electroluminescence (EL) excitation. By measuring the laser spot area (knife-edge method) and the absorbance of the GaInN QW (transmittance/reflectance measurements), the PL excitation density can be converted to an equivalent EL excitation density. The EL efficiency droop-onset occurs at an excitation density of 2.08 × 10²⁶ cm^-3 s^-1 (J = 10 A/cm²), whereas no PL efficiency droop is found for excitation densities as high as 3.11 × 10²⁷ cm^-3 s^-1 (J = 149 A/cm²). Considering Shockley-Read-Hall, radiative, and Auger recombination and including carrier leakage shows that the EL efficiency droop is consistent with a reduction of injection efficiency.

Original language	English
Pages (from-to)	1013-1018
Number of pages	6
Journal	ACS Photonics
Volume	2
Issue number	8
DOIs	https://doi.org/10.1021/acsphotonics.5b00305
State	Published - 2015.08.19

Keywords

efficiency droop
light-emitting diode
nitride semiconductor
solid-state lighting

Quacquarelli Symonds(QS) Subject Topics

Materials Science
Engineering - Electrical & Electronic
Engineering - Petroleum
Physics & Astronomy
Biological Sciences

Access to Document

10.1021/acsphotonics.5b00305

Cite this

@article{7c44483ae07643ceb7141d95d1964755,

title = "Onset of the Efficiency Droop in GaInN Quantum Well Light-Emitting Diodes under Photoluminescence and Electroluminescence Excitation",

abstract = "The efficiency of Ga0.87In0.13N/GaN single and multiple quantum well (QW) light-emitting diodes is investigated under photoluminescence (PL) and electroluminescence (EL) excitation. By measuring the laser spot area (knife-edge method) and the absorbance of the GaInN QW (transmittance/reflectance measurements), the PL excitation density can be converted to an equivalent EL excitation density. The EL efficiency droop-onset occurs at an excitation density of 2.08 × 1026 cm-3 s-1 (J = 10 A/cm2), whereas no PL efficiency droop is found for excitation densities as high as 3.11 × 1027 cm-3 s-1 (J = 149 A/cm2). Considering Shockley-Read-Hall, radiative, and Auger recombination and including carrier leakage shows that the EL efficiency droop is consistent with a reduction of injection efficiency.",

keywords = "efficiency droop, light-emitting diode, nitride semiconductor, solid-state lighting",

author = "Lin, \{Guan Bo\} and Schubert, \{E. Fred\} and Jaehee Cho and Park, \{Jun Hyuk\} and Kim, \{Jong Kyu\}",

note = "Publisher Copyright: {\textcopyright} 2015 American Chemical Society.",

year = "2015",

month = aug,

day = "19",

doi = "10.1021/acsphotonics.5b00305",

language = "English",

volume = "2",

pages = "1013--1018",

journal = "ACS Photonics",

issn = "2330-4022",

number = "8",

}

TY - JOUR

T1 - Onset of the Efficiency Droop in GaInN Quantum Well Light-Emitting Diodes under Photoluminescence and Electroluminescence Excitation

AU - Lin, Guan Bo

AU - Schubert, E. Fred

AU - Cho, Jaehee

AU - Park, Jun Hyuk

AU - Kim, Jong Kyu

PY - 2015/8/19

Y1 - 2015/8/19

N2 - The efficiency of Ga0.87In0.13N/GaN single and multiple quantum well (QW) light-emitting diodes is investigated under photoluminescence (PL) and electroluminescence (EL) excitation. By measuring the laser spot area (knife-edge method) and the absorbance of the GaInN QW (transmittance/reflectance measurements), the PL excitation density can be converted to an equivalent EL excitation density. The EL efficiency droop-onset occurs at an excitation density of 2.08 × 1026 cm-3 s-1 (J = 10 A/cm2), whereas no PL efficiency droop is found for excitation densities as high as 3.11 × 1027 cm-3 s-1 (J = 149 A/cm2). Considering Shockley-Read-Hall, radiative, and Auger recombination and including carrier leakage shows that the EL efficiency droop is consistent with a reduction of injection efficiency.

AB - The efficiency of Ga0.87In0.13N/GaN single and multiple quantum well (QW) light-emitting diodes is investigated under photoluminescence (PL) and electroluminescence (EL) excitation. By measuring the laser spot area (knife-edge method) and the absorbance of the GaInN QW (transmittance/reflectance measurements), the PL excitation density can be converted to an equivalent EL excitation density. The EL efficiency droop-onset occurs at an excitation density of 2.08 × 1026 cm-3 s-1 (J = 10 A/cm2), whereas no PL efficiency droop is found for excitation densities as high as 3.11 × 1027 cm-3 s-1 (J = 149 A/cm2). Considering Shockley-Read-Hall, radiative, and Auger recombination and including carrier leakage shows that the EL efficiency droop is consistent with a reduction of injection efficiency.

KW - efficiency droop

KW - light-emitting diode

KW - nitride semiconductor

KW - solid-state lighting

UR - https://www.scopus.com/pages/publications/84939782419

U2 - 10.1021/acsphotonics.5b00305

DO - 10.1021/acsphotonics.5b00305

M3 - Journal article

AN - SCOPUS:84939782419

SN - 2330-4022

VL - 2

SP - 1013

EP - 1018

JO - ACS Photonics

JF - ACS Photonics

IS - 8

ER -

Onset of the Efficiency Droop in GaInN Quantum Well Light-Emitting Diodes under Photoluminescence and Electroluminescence Excitation

Abstract

Keywords

Quacquarelli Symonds(QS) Subject Topics

Access to Document

Other files and links

Fingerprint

Cite this