Optical characterization of Ge-on-Si grown by using RTCVD

T. S. Kim; Y. H. Kil; W. K. Hong; H. D. Yang; S. Kang; T. S. Jeong; K. H. Shim

doi:10.1149/05009.0381ecst

Optical characterization of Ge-on-Si grown by using RTCVD

T. S. Kim^*
, Y. H. Kil
, W. K. Hong
, H. D. Yang
, S. Kang
, T. S. Jeong
, K. H. Shim

^*Corresponding author for this work

Jeonbuk National University

Research output: Contribution to conference › Conference paper › peer-review

8 Scopus citations

Abstract

We have investigated the characterization of Ge-on-Si Grown by using RTCVD. From the HR-XRD analysis, the Ge epi-layer shows good crystalline homogeneity and the lattice parameter of the Ge layer along the growth direction was calculated as 5.654 Å, indicating the compressive strain of 0.07%. The Ge peak Raman shift for each sample indicates compressive strain from the bulk Ge reference. The roll-off in photocurrent after 1600 nm is expected due to the decreased absorption of Ge.

Original language	English
Title of host publication	SiGe, Ge, and Related Compounds 5
Subtitle of host publication	Materials, Processing, and Devices
Publisher	Electrochemical Society Inc.
Pages	381-386
Number of pages	6
Edition	9
ISBN (Print)	9781607683575
DOIs	https://doi.org/10.1149/05009.0381ecst
State	Published - 2013
Event	5th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 220th ECS Meeting - Honolulu, HI, United States Duration: 2012.10.7 → 2012.10.12

Publication series

Name	ECS Transactions
Number	9
Volume	50
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Conference

Conference	5th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 220th ECS Meeting
Country/Territory	United States
City	Honolulu, HI
Period	12.10.7 → 12.10.12

Quacquarelli Symonds(QS) Subject Topics

Engineering & Technology

Access to Document

10.1149/05009.0381ecst

Cite this

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title = "Optical characterization of Ge-on-Si grown by using RTCVD",

abstract = "We have investigated the characterization of Ge-on-Si Grown by using RTCVD. From the HR-XRD analysis, the Ge epi-layer shows good crystalline homogeneity and the lattice parameter of the Ge layer along the growth direction was calculated as 5.654 {\AA}, indicating the compressive strain of 0.07\%. The Ge peak Raman shift for each sample indicates compressive strain from the bulk Ge reference. The roll-off in photocurrent after 1600 nm is expected due to the decreased absorption of Ge.",

author = "Kim, \{T. S.\} and Kil, \{Y. H.\} and Hong, \{W. K.\} and Yang, \{H. D.\} and S. Kang and Jeong, \{T. S.\} and Shim, \{K. H.\}",

year = "2013",

doi = "10.1149/05009.0381ecst",

language = "English",

isbn = "9781607683575",

series = "ECS Transactions",

publisher = "Electrochemical Society Inc.",

number = "9",

pages = "381--386",

booktitle = "SiGe, Ge, and Related Compounds 5",

edition = "9",

note = "5th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 220th ECS Meeting ; Conference date: 07-10-2012 Through 12-10-2012",

}

Kim, TS, Kil, YH, Hong, WK, Yang, HD, Kang, S, Jeong, TS & Shim, KH 2013, Optical characterization of Ge-on-Si grown by using RTCVD. in SiGe, Ge, and Related Compounds 5: Materials, Processing, and Devices. 9 edn, ECS Transactions, no. 9, vol. 50, Electrochemical Society Inc., pp. 381-386, 5th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 220th ECS Meeting, Honolulu, HI, United States, 12.10.7. https://doi.org/10.1149/05009.0381ecst

TY - GEN

T1 - Optical characterization of Ge-on-Si grown by using RTCVD

AU - Kim, T. S.

AU - Kil, Y. H.

AU - Hong, W. K.

AU - Yang, H. D.

AU - Kang, S.

AU - Jeong, T. S.

AU - Shim, K. H.

PY - 2013

Y1 - 2013

N2 - We have investigated the characterization of Ge-on-Si Grown by using RTCVD. From the HR-XRD analysis, the Ge epi-layer shows good crystalline homogeneity and the lattice parameter of the Ge layer along the growth direction was calculated as 5.654 Å, indicating the compressive strain of 0.07%. The Ge peak Raman shift for each sample indicates compressive strain from the bulk Ge reference. The roll-off in photocurrent after 1600 nm is expected due to the decreased absorption of Ge.

AB - We have investigated the characterization of Ge-on-Si Grown by using RTCVD. From the HR-XRD analysis, the Ge epi-layer shows good crystalline homogeneity and the lattice parameter of the Ge layer along the growth direction was calculated as 5.654 Å, indicating the compressive strain of 0.07%. The Ge peak Raman shift for each sample indicates compressive strain from the bulk Ge reference. The roll-off in photocurrent after 1600 nm is expected due to the decreased absorption of Ge.

UR - https://www.scopus.com/pages/publications/84880077950

U2 - 10.1149/05009.0381ecst

DO - 10.1149/05009.0381ecst

M3 - Conference paper

AN - SCOPUS:84880077950

SN - 9781607683575

T3 - ECS Transactions

SP - 381

EP - 386

BT - SiGe, Ge, and Related Compounds 5

PB - Electrochemical Society Inc.

T2 - 5th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 220th ECS Meeting

Y2 - 7 October 2012 through 12 October 2012

ER -

Optical characterization of Ge-on-Si grown by using RTCVD

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