Optical degradation of white GaN-based light emitting diodes stressed under DC current and temperatures

E. Jung; H. Kim

doi:10.1109/IPFA.2011.5992719

Optical degradation of white GaN-based light emitting diodes stressed under DC current and temperatures

E. Jung^*
, H. Kim

^*Corresponding author for this work

Department of Semiconductor Science and Technology

Jeonbuk National University

Research output: Contribution to conference › Conference paper › peer-review

Abstract

The optical degradation of white GaN-based light-emitting diodes stressed under dc current and temperatures were investigated. Rapid optical degradation accompanied with the change of chromatic properties and the evolution of leakage currents was attributed to the darkening of packaged materials and generation of defects.

Original language	English
Title of host publication	18th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2011
DOIs	https://doi.org/10.1109/IPFA.2011.5992719
State	Published - 2011
Event	18th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2011 - Incheon, Korea, Republic of Duration: 2011.07.4 → 2011.07.7

Publication series

Name	Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA

Conference

Conference	18th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2011
Country/Territory	Korea, Republic of
City	Incheon
Period	11.07.4 → 11.07.7

Quacquarelli Symonds(QS) Subject Topics

Engineering - Electrical & Electronic
Engineering - Petroleum

Access to Document

10.1109/IPFA.2011.5992719

Cite this

Jung, E., & Kim, H. (2011). Optical degradation of white GaN-based light emitting diodes stressed under DC current and temperatures. In 18th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2011 Article 5992719 (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA). https://doi.org/10.1109/IPFA.2011.5992719

@inproceedings{cfb468e9f2c040708142aa022b526767,

title = "Optical degradation of white GaN-based light emitting diodes stressed under DC current and temperatures",

abstract = "The optical degradation of white GaN-based light-emitting diodes stressed under dc current and temperatures were investigated. Rapid optical degradation accompanied with the change of chromatic properties and the evolution of leakage currents was attributed to the darkening of packaged materials and generation of defects.",

author = "E. Jung and H. Kim",

year = "2011",

doi = "10.1109/IPFA.2011.5992719",

language = "English",

isbn = "9781457701597",

series = "Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA",

booktitle = "18th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2011",

note = "18th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2011 ; Conference date: 04-07-2011 Through 07-07-2011",

}

Jung, E & Kim, H 2011, Optical degradation of white GaN-based light emitting diodes stressed under DC current and temperatures. in 18th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2011., 5992719, Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA, 18th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2011, Incheon, Korea, Republic of, 11.07.4. https://doi.org/10.1109/IPFA.2011.5992719

Optical degradation of white GaN-based light emitting diodes stressed under DC current and temperatures. / Jung, E.; Kim, H.
18th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2011. 2011. 5992719 (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA).

Research output: Contribution to conference › Conference paper › peer-review

TY - GEN

T1 - Optical degradation of white GaN-based light emitting diodes stressed under DC current and temperatures

AU - Jung, E.

AU - Kim, H.

PY - 2011

Y1 - 2011

N2 - The optical degradation of white GaN-based light-emitting diodes stressed under dc current and temperatures were investigated. Rapid optical degradation accompanied with the change of chromatic properties and the evolution of leakage currents was attributed to the darkening of packaged materials and generation of defects.

AB - The optical degradation of white GaN-based light-emitting diodes stressed under dc current and temperatures were investigated. Rapid optical degradation accompanied with the change of chromatic properties and the evolution of leakage currents was attributed to the darkening of packaged materials and generation of defects.

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DO - 10.1109/IPFA.2011.5992719

M3 - Conference paper

AN - SCOPUS:80052635785

SN - 9781457701597

T3 - Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA

BT - 18th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2011

T2 - 18th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2011

Y2 - 4 July 2011 through 7 July 2011

ER -

Jung E, Kim H. Optical degradation of white GaN-based light emitting diodes stressed under DC current and temperatures. In 18th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2011. 2011. 5992719. (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA). doi: 10.1109/IPFA.2011.5992719

Optical degradation of white GaN-based light emitting diodes stressed under DC current and temperatures

Abstract

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