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Optical emission characteristics of GaAs and GaN structures using low temperature near-field scanning optical spectroscopy

  • Yong Hoon Cho
  • , S. K. Eah
  • , S. C. Hohng
  • , D. S. Kim
  • , G. M. Yang
  • , J. J. Song
  • , W. Jhe
  • Seoul National University
  • Oklahoma State University

Research output: Contribution to conferenceConference paperpeer-review

Abstract

In this study, we present the results of optical studies of GaAs- and GaN-related structures using LT-NSOM. The optical properties were investigated over the temperature range of 4 to 300 K by means of photoluminescence (PL), PL excitation, and time-resolved PL spectroscopy using a single excitation source, combined with photo-modulated reflectance (PR) spectroscopy using separate pump and probe sources.

Original languageEnglish
Title of host publicationCLEO/Pacific Rim 1999 - Pacific Rim Conference on Lasers and Electro-Optics
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages999
Number of pages1
ISBN (Electronic)0780356616, 9780780356610
DOIs
StatePublished - 1999
Event1999 Pacific Rim Conference on Lasers and Electro-Optics, CLEO/Pacific Rim 1999 - Seoul, Korea, Republic of
Duration: 1999.08.301999.09.3

Publication series

NameCLEO/Pacific Rim 1999 - Pacific Rim Conference on Lasers and Electro-Optics
Volume3

Conference

Conference1999 Pacific Rim Conference on Lasers and Electro-Optics, CLEO/Pacific Rim 1999
Country/TerritoryKorea, Republic of
CitySeoul
Period99.08.3099.09.3

Quacquarelli Symonds(QS) Subject Topics

  • Materials Science
  • Computer Science & Information Systems
  • Physics & Astronomy

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