Optical evidence for the effect of gamma-ray irradiation on ferroelectric Pb(Zr0.52Ti0.48)O3 thin films

Junhwi Lim; Y. S. Lee; Sun A. Yang; Sang Don Bu

doi:10.3938/jkps.68.1347

Optical evidence for the effect of gamma-ray irradiation on ferroelectric Pb(Zr_0.52Ti_0.48)O₃ thin films

Junhwi Lim
, Y. S. Lee^*
, Sun A. Yang
, Sang Don Bu

^*Corresponding author for this work

Department of Physics

Soongsil University
Jeonbuk National University

Research output: Contribution to journal › Journal article › peer-review

6 Scopus citations

Abstract

We investigated the visible emission property of Pb(Zr,Ti)O₃ (PZT) thin films irradiated with gammy-ray (γ-ray) irradiated at various total doses up to 1000 kGy. The PZT thin films were prepared on Pt/Ti/SiO₂/Si substrates by using a sol-gel method with a spin-coating process. The visible emission was found to emerge near 550 nm upon γ-ray irradiation, and the intensity of the emission increased with increasing dose. The spectrum of the γ-ray-induced emission was quite narrow, which was quite different from that due to normal defects such as oxygen vacancies. We suggest that the γ-ray irradiation generates inside the PZT films a specific type of defect state that can be detected by using low-temperature photoluminescence spectroscopy.

Original language	English
Pages (from-to)	1347-1351
Number of pages	5
Journal	Journal of the Korean Physical Society
Volume	68
Issue number	11
DOIs	https://doi.org/10.3938/jkps.68.1347
State	Published - 2016.06.1

Keywords

Gamma-ray irradiation
Pb(Zr,Ti)O
Photoluminescence

Quacquarelli Symonds(QS) Subject Topics

Physics & Astronomy

Access to Document

10.3938/jkps.68.1347

Cite this

@article{9631a835b42a43c0a816c9fcd005c7ff,

title = "Optical evidence for the effect of gamma-ray irradiation on ferroelectric Pb(Zr0.52Ti0.48)O3 thin films",

abstract = "We investigated the visible emission property of Pb(Zr,Ti)O3 (PZT) thin films irradiated with gammy-ray (γ-ray) irradiated at various total doses up to 1000 kGy. The PZT thin films were prepared on Pt/Ti/SiO2/Si substrates by using a sol-gel method with a spin-coating process. The visible emission was found to emerge near 550 nm upon γ-ray irradiation, and the intensity of the emission increased with increasing dose. The spectrum of the γ-ray-induced emission was quite narrow, which was quite different from that due to normal defects such as oxygen vacancies. We suggest that the γ-ray irradiation generates inside the PZT films a specific type of defect state that can be detected by using low-temperature photoluminescence spectroscopy.",

keywords = "Gamma-ray irradiation, Pb(Zr,Ti)O, Photoluminescence",

author = "Junhwi Lim and Lee, \{Y. S.\} and Yang, \{Sun A.\} and Bu, \{Sang Don\}",

note = "Publisher Copyright: {\textcopyright} 2016, The Korean Physical Society.",

year = "2016",

month = jun,

day = "1",

doi = "10.3938/jkps.68.1347",

language = "English",

volume = "68",

pages = "1347--1351",

journal = "Journal of the Korean Physical Society",

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TY - JOUR

T1 - Optical evidence for the effect of gamma-ray irradiation on ferroelectric Pb(Zr0.52Ti0.48)O3 thin films

AU - Lim, Junhwi

AU - Lee, Y. S.

AU - Yang, Sun A.

AU - Bu, Sang Don

PY - 2016/6/1

Y1 - 2016/6/1

N2 - We investigated the visible emission property of Pb(Zr,Ti)O3 (PZT) thin films irradiated with gammy-ray (γ-ray) irradiated at various total doses up to 1000 kGy. The PZT thin films were prepared on Pt/Ti/SiO2/Si substrates by using a sol-gel method with a spin-coating process. The visible emission was found to emerge near 550 nm upon γ-ray irradiation, and the intensity of the emission increased with increasing dose. The spectrum of the γ-ray-induced emission was quite narrow, which was quite different from that due to normal defects such as oxygen vacancies. We suggest that the γ-ray irradiation generates inside the PZT films a specific type of defect state that can be detected by using low-temperature photoluminescence spectroscopy.

AB - We investigated the visible emission property of Pb(Zr,Ti)O3 (PZT) thin films irradiated with gammy-ray (γ-ray) irradiated at various total doses up to 1000 kGy. The PZT thin films were prepared on Pt/Ti/SiO2/Si substrates by using a sol-gel method with a spin-coating process. The visible emission was found to emerge near 550 nm upon γ-ray irradiation, and the intensity of the emission increased with increasing dose. The spectrum of the γ-ray-induced emission was quite narrow, which was quite different from that due to normal defects such as oxygen vacancies. We suggest that the γ-ray irradiation generates inside the PZT films a specific type of defect state that can be detected by using low-temperature photoluminescence spectroscopy.

KW - Gamma-ray irradiation

KW - Pb(Zr,Ti)O

KW - Photoluminescence

UR - https://www.scopus.com/pages/publications/84975887117

U2 - 10.3938/jkps.68.1347

DO - 10.3938/jkps.68.1347

M3 - Journal article

AN - SCOPUS:84975887117

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VL - 68

SP - 1347

EP - 1351

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

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