@inproceedings{aaf7517234464a02a93cde5e3b0a9cf2,
title = "Optical performance characteristics of light-emitting diodes designed with dip-shaped InGaN/GaN quantum well structures",
abstract = "A dip-shaped InGaN/GaN quantum well (QW) structure was computed to design efficient light-emitting diodes (LEDs). The advanced LEDs designed with the dip-shaped QW structures exhibited higher internal quantum efficiency by 26\% and the lower temperature-driven efficiency droop as compared to the reference LEDs. This could be due to the enhanced radiative recombination rate in the QW active region, which is associated with the reduced spatial separation of electron-hole wave functions.",
keywords = "Dip-shaped, Efficiency droop, Optical characterization, Quantum well, Simulation",
author = "Kim, \{Seong Jun\} and Choi, \{Chel Jong\} and Kim, \{Hyun Soo\}",
year = "2013",
doi = "10.4028/www.scientific.net/AMM.328.845",
language = "English",
isbn = "9783037857120",
series = "Applied Mechanics and Materials",
pages = "845--849",
booktitle = "Mechanical Science and Engineering III",
note = "2013 3rd International Conference on Mechanical Science and Engineering, ICMSE 2013 ; Conference date: 01-03-2013 Through 03-03-2013",
}