Optical properties and carrier dynamics of GaAs/GaInAs multiple-quantum-well shell grown on GaAs nanowire by molecular beam epitaxy

Kwangwook Park; Sooraj Ravindran; Gun Wu Ju; Jung Wook Min; Seokjin Kang; No Soung Myoung; Sang Youp Yim; Yong Ryun Jo; Bong Joong Kim; Yong Tak Lee

doi:10.1016/j.cap.2016.08.025

Optical properties and carrier dynamics of GaAs/GaInAs multiple-quantum-well shell grown on GaAs nanowire by molecular beam epitaxy

Kwangwook Park^*
, Sooraj Ravindran
, Gun Wu Ju
, Jung Wook Min
, Seokjin Kang
, No Soung Myoung
, Sang Youp Yim
, Yong Ryun Jo
, Bong Joong Kim
, Yong Tak Lee

^*Corresponding author for this work

Electronic Materials Engineering

National Renewable Energy Laboratory
Indian Institute of Space Science and Technology
Gwangju Institute of Science and Technology

Research output: Contribution to journal › Journal article › peer-review

2 Scopus citations

Abstract

GaAs/GaInAs multiple-quantum-well (MQW) shells having different GaInAs shell width formed on the surface of self-catalyzed GaAs core nanowires (NWs) are grown on (100) Si substrate using molecular beam epitaxy. The photoluminescence emission from GaAs/GaInAs MQW shells and the carrier lifetime could be varied by changing the width of GaInAs shell. Time-resolved photoluminescence measurements showed that the carrier lifetime had a fast and slow decay owing to the mixing of wurtzite and zinc-blende structures of the NWs. Furthermore, strain relaxation caused the carrier lifetime to decrease beyond a certain thickness of GaInAs quantum well shells.

Original language	English
Pages (from-to)	1622-1626
Number of pages	5
Journal	Current Applied Physics
Volume	16
Issue number	12
DOIs	https://doi.org/10.1016/j.cap.2016.08.025
State	Published - 2016.12.1

Keywords

Epitaxy growth
III-V semiconductors
Molecular beam epitaxy
Nanowire
Optical characterization

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10.1016/j.cap.2016.08.025

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@article{7e56cbd41cfd4beeaa5a0f3b9a65f81a,

title = "Optical properties and carrier dynamics of GaAs/GaInAs multiple-quantum-well shell grown on GaAs nanowire by molecular beam epitaxy",

abstract = "GaAs/GaInAs multiple-quantum-well (MQW) shells having different GaInAs shell width formed on the surface of self-catalyzed GaAs core nanowires (NWs) are grown on (100) Si substrate using molecular beam epitaxy. The photoluminescence emission from GaAs/GaInAs MQW shells and the carrier lifetime could be varied by changing the width of GaInAs shell. Time-resolved photoluminescence measurements showed that the carrier lifetime had a fast and slow decay owing to the mixing of wurtzite and zinc-blende structures of the NWs. Furthermore, strain relaxation caused the carrier lifetime to decrease beyond a certain thickness of GaInAs quantum well shells.",

keywords = "Epitaxy growth, III-V semiconductors, Molecular beam epitaxy, Nanowire, Optical characterization",

author = "Kwangwook Park and Sooraj Ravindran and Ju, \{Gun Wu\} and Min, \{Jung Wook\} and Seokjin Kang and Myoung, \{No Soung\} and Yim, \{Sang Youp\} and Jo, \{Yong Ryun\} and Kim, \{Bong Joong\} and Lee, \{Yong Tak\}",

note = "Publisher Copyright: {\textcopyright} 2016 Elsevier B.V.",

year = "2016",

month = dec,

day = "1",

doi = "10.1016/j.cap.2016.08.025",

language = "English",

volume = "16",

pages = "1622--1626",

journal = "Current Applied Physics",

issn = "1567-1739",

number = "12",

}

TY - JOUR

T1 - Optical properties and carrier dynamics of GaAs/GaInAs multiple-quantum-well shell grown on GaAs nanowire by molecular beam epitaxy

AU - Park, Kwangwook

AU - Ravindran, Sooraj

AU - Ju, Gun Wu

AU - Min, Jung Wook

AU - Kang, Seokjin

AU - Myoung, No Soung

AU - Yim, Sang Youp

AU - Jo, Yong Ryun

AU - Kim, Bong Joong

AU - Lee, Yong Tak

PY - 2016/12/1

Y1 - 2016/12/1

N2 - GaAs/GaInAs multiple-quantum-well (MQW) shells having different GaInAs shell width formed on the surface of self-catalyzed GaAs core nanowires (NWs) are grown on (100) Si substrate using molecular beam epitaxy. The photoluminescence emission from GaAs/GaInAs MQW shells and the carrier lifetime could be varied by changing the width of GaInAs shell. Time-resolved photoluminescence measurements showed that the carrier lifetime had a fast and slow decay owing to the mixing of wurtzite and zinc-blende structures of the NWs. Furthermore, strain relaxation caused the carrier lifetime to decrease beyond a certain thickness of GaInAs quantum well shells.

AB - GaAs/GaInAs multiple-quantum-well (MQW) shells having different GaInAs shell width formed on the surface of self-catalyzed GaAs core nanowires (NWs) are grown on (100) Si substrate using molecular beam epitaxy. The photoluminescence emission from GaAs/GaInAs MQW shells and the carrier lifetime could be varied by changing the width of GaInAs shell. Time-resolved photoluminescence measurements showed that the carrier lifetime had a fast and slow decay owing to the mixing of wurtzite and zinc-blende structures of the NWs. Furthermore, strain relaxation caused the carrier lifetime to decrease beyond a certain thickness of GaInAs quantum well shells.

KW - Epitaxy growth

KW - III-V semiconductors

KW - Molecular beam epitaxy

KW - Nanowire

KW - Optical characterization

UR - https://www.scopus.com/pages/publications/84989315072

U2 - 10.1016/j.cap.2016.08.025

DO - 10.1016/j.cap.2016.08.025

M3 - Journal article

AN - SCOPUS:84989315072

SN - 1567-1739

VL - 16

SP - 1622

EP - 1626

JO - Current Applied Physics

JF - Current Applied Physics

IS - 12

ER -

Optical properties and carrier dynamics of GaAs/GaInAs multiple-quantum-well shell grown on GaAs nanowire by molecular beam epitaxy

Abstract

Keywords

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