Optical properties of hybrid Si1-xGex/Si quantum dot/quantum well structures grown on Si by RPCVD

Yeon Ho Kil; Hyeon Deok Yang; Jong Han Yang; Sukill Kang; Tae Soo Jeong; Chel Jong Choi; Taek Sung Kim; Kyu Hwan Shim

doi:10.1016/j.mssp.2013.09.018

Optical properties of hybrid Si_1-xGe_x/Si quantum dot/quantum well structures grown on Si by RPCVD

Yeon Ho Kil
, Hyeon Deok Yang
, Jong Han Yang
, Sukill Kang
, Tae Soo Jeong
, Chel Jong Choi
, Taek Sung Kim^*
, Kyu Hwan Shim

^*Corresponding author for this work

Jeonbuk National University

Research output: Contribution to journal › Journal article › peer-review

2 Scopus citations

Abstract

We experimentally investigated the optical properties of structures consisting of a Si_1-xGe_x/Si quantum well and stacked quantum dots on Si substrates. The Ge composition determined for Si _1-xGe_x quantum wells and dots was approximately 20% and 30%, respectively. Three Raman peaks observed at approximately 520, 410, and 295 cm^-1 correspond to vibration of Si-Si, Si-Ge, and Ge-Ge phonons, and a peak related to Si_1-xGe_x quantum dots was observed at 490 cm^-1. Photocurrent spectra were dominated by transitions related to the quantum dots and quantum well corresponding to the energy gap and split-off band for Si and energy for Si_1-xGe_x quantum dots and wells.

Original language	English
Pages (from-to)	178-183
Number of pages	6
Journal	Materials Science in Semiconductor Processing
Volume	17
DOIs	https://doi.org/10.1016/j.mssp.2013.09.018
State	Published - 2014

Keywords

Hybrid
Photocurrent
Quantum dot
Quantum well
Raman
SiGe

Quacquarelli Symonds(QS) Subject Topics

Materials Science
Engineering - Mechanical
Physics & Astronomy

Access to Document

10.1016/j.mssp.2013.09.018

Cite this

@article{27d801322da2478bb5ca486de2405c7f,

title = "Optical properties of hybrid Si1-xGex/Si quantum dot/quantum well structures grown on Si by RPCVD",

abstract = "We experimentally investigated the optical properties of structures consisting of a Si1-xGex/Si quantum well and stacked quantum dots on Si substrates. The Ge composition determined for Si 1-xGex quantum wells and dots was approximately 20\% and 30\%, respectively. Three Raman peaks observed at approximately 520, 410, and 295 cm-1 correspond to vibration of Si-Si, Si-Ge, and Ge-Ge phonons, and a peak related to Si1-xGex quantum dots was observed at 490 cm-1. Photocurrent spectra were dominated by transitions related to the quantum dots and quantum well corresponding to the energy gap and split-off band for Si and energy for Si1-xGex quantum dots and wells.",

keywords = "Hybrid, Photocurrent, Quantum dot, Quantum well, Raman, SiGe",

author = "Kil, \{Yeon Ho\} and Yang, \{Hyeon Deok\} and Yang, \{Jong Han\} and Sukill Kang and Jeong, \{Tae Soo\} and Choi, \{Chel Jong\} and Kim, \{Taek Sung\} and Shim, \{Kyu Hwan\}",

year = "2014",

doi = "10.1016/j.mssp.2013.09.018",

language = "English",

volume = "17",

pages = "178--183",

journal = "Materials Science in Semiconductor Processing",

issn = "1369-8001",

}

TY - JOUR

T1 - Optical properties of hybrid Si1-xGex/Si quantum dot/quantum well structures grown on Si by RPCVD

AU - Kil, Yeon Ho

AU - Yang, Hyeon Deok

AU - Yang, Jong Han

AU - Kang, Sukill

AU - Jeong, Tae Soo

AU - Choi, Chel Jong

AU - Kim, Taek Sung

AU - Shim, Kyu Hwan

PY - 2014

Y1 - 2014

N2 - We experimentally investigated the optical properties of structures consisting of a Si1-xGex/Si quantum well and stacked quantum dots on Si substrates. The Ge composition determined for Si 1-xGex quantum wells and dots was approximately 20% and 30%, respectively. Three Raman peaks observed at approximately 520, 410, and 295 cm-1 correspond to vibration of Si-Si, Si-Ge, and Ge-Ge phonons, and a peak related to Si1-xGex quantum dots was observed at 490 cm-1. Photocurrent spectra were dominated by transitions related to the quantum dots and quantum well corresponding to the energy gap and split-off band for Si and energy for Si1-xGex quantum dots and wells.

AB - We experimentally investigated the optical properties of structures consisting of a Si1-xGex/Si quantum well and stacked quantum dots on Si substrates. The Ge composition determined for Si 1-xGex quantum wells and dots was approximately 20% and 30%, respectively. Three Raman peaks observed at approximately 520, 410, and 295 cm-1 correspond to vibration of Si-Si, Si-Ge, and Ge-Ge phonons, and a peak related to Si1-xGex quantum dots was observed at 490 cm-1. Photocurrent spectra were dominated by transitions related to the quantum dots and quantum well corresponding to the energy gap and split-off band for Si and energy for Si1-xGex quantum dots and wells.

KW - Hybrid

KW - Photocurrent

KW - Quantum dot

KW - Quantum well

KW - Raman

KW - SiGe

UR - https://www.scopus.com/pages/publications/84886685556

U2 - 10.1016/j.mssp.2013.09.018

DO - 10.1016/j.mssp.2013.09.018

M3 - Journal article

AN - SCOPUS:84886685556

SN - 1369-8001

VL - 17

SP - 178

EP - 183

JO - Materials Science in Semiconductor Processing

JF - Materials Science in Semiconductor Processing

ER -