Optical properties of Si0.8Ge0.2/Si multiple quantum wells

K. H. Shim; Y. H. Kil; H. K. Lee; M. I. Shin; T. S. Jeong; S. Kang; C. J. Choi; T. S. Kim

doi:10.1016/j.mssp.2011.01.016

Optical properties of Si_0.8Ge_0.2/Si multiple quantum wells

K. H. Shim
, Y. H. Kil
, H. K. Lee
, M. I. Shin
, T. S. Jeong
, S. Kang
, C. J. Choi
, T. S. Kim

Jeonbuk National University

Research output: Contribution to journal › Journal article › peer-review

4 Scopus citations

Abstract

The optical property was studied on the Si_0.8Ge_0.2/Si strained multiple quantum well (MQW) structure grown using ultra-high vacuum chemical vapor deposition (UHV-CVD). Three peaks are observed in Raman spectrum, which are located at about 510, 410, and 300 cm^-1, corresponding to the vibration of SiSi, SiGe, and GeGe phonons, respectively. The photoluminescence (PL) spectrum originates from the radiative recombinations both from the Si substrate and the Si_0.8Ge_0.2/Si MQW. For Si_0.8Ge_0.2/Si strained MQW, the transition peaks related to the MQW region observed in the photocurrent (PC) spectrum were preliminarily assigned to electronheavy hole (ehh) and electronlight hole (elh) fundamental excitonic transitions.

Original language	English
Pages (from-to)	128-132
Number of pages	5
Journal	Materials Science in Semiconductor Processing
Volume	14
Issue number	2
DOIs	https://doi.org/10.1016/j.mssp.2011.01.016
State	Published - 2011.06

Keywords

MQW
PC
PL
Raman
SiGe
UHV-CVD

Quacquarelli Symonds(QS) Subject Topics

Materials Science
Engineering - Mechanical
Physics & Astronomy

Access to Document

10.1016/j.mssp.2011.01.016

Cite this

@article{124253d56fa149f8a5807edf2433801e,

title = "Optical properties of Si0.8Ge0.2/Si multiple quantum wells",

abstract = "The optical property was studied on the Si0.8Ge0.2/Si strained multiple quantum well (MQW) structure grown using ultra-high vacuum chemical vapor deposition (UHV-CVD). Three peaks are observed in Raman spectrum, which are located at about 510, 410, and 300 cm-1, corresponding to the vibration of SiSi, SiGe, and GeGe phonons, respectively. The photoluminescence (PL) spectrum originates from the radiative recombinations both from the Si substrate and the Si0.8Ge0.2/Si MQW. For Si0.8Ge0.2/Si strained MQW, the transition peaks related to the MQW region observed in the photocurrent (PC) spectrum were preliminarily assigned to electronheavy hole (ehh) and electronlight hole (elh) fundamental excitonic transitions.",

keywords = "MQW, PC, PL, Raman, SiGe, UHV-CVD",

author = "Shim, \{K. H.\} and Kil, \{Y. H.\} and Lee, \{H. K.\} and Shin, \{M. I.\} and Jeong, \{T. S.\} and S. Kang and Choi, \{C. J.\} and Kim, \{T. S.\}",

year = "2011",

month = jun,

doi = "10.1016/j.mssp.2011.01.016",

language = "English",

volume = "14",

pages = "128--132",

journal = "Materials Science in Semiconductor Processing",

issn = "1369-8001",

number = "2",

}

TY - JOUR

T1 - Optical properties of Si0.8Ge0.2/Si multiple quantum wells

AU - Shim, K. H.

AU - Kil, Y. H.

AU - Lee, H. K.

AU - Shin, M. I.

AU - Jeong, T. S.

AU - Kang, S.

AU - Choi, C. J.

AU - Kim, T. S.

PY - 2011/6

Y1 - 2011/6

N2 - The optical property was studied on the Si0.8Ge0.2/Si strained multiple quantum well (MQW) structure grown using ultra-high vacuum chemical vapor deposition (UHV-CVD). Three peaks are observed in Raman spectrum, which are located at about 510, 410, and 300 cm-1, corresponding to the vibration of SiSi, SiGe, and GeGe phonons, respectively. The photoluminescence (PL) spectrum originates from the radiative recombinations both from the Si substrate and the Si0.8Ge0.2/Si MQW. For Si0.8Ge0.2/Si strained MQW, the transition peaks related to the MQW region observed in the photocurrent (PC) spectrum were preliminarily assigned to electronheavy hole (ehh) and electronlight hole (elh) fundamental excitonic transitions.

AB - The optical property was studied on the Si0.8Ge0.2/Si strained multiple quantum well (MQW) structure grown using ultra-high vacuum chemical vapor deposition (UHV-CVD). Three peaks are observed in Raman spectrum, which are located at about 510, 410, and 300 cm-1, corresponding to the vibration of SiSi, SiGe, and GeGe phonons, respectively. The photoluminescence (PL) spectrum originates from the radiative recombinations both from the Si substrate and the Si0.8Ge0.2/Si MQW. For Si0.8Ge0.2/Si strained MQW, the transition peaks related to the MQW region observed in the photocurrent (PC) spectrum were preliminarily assigned to electronheavy hole (ehh) and electronlight hole (elh) fundamental excitonic transitions.

KW - MQW

KW - PC

KW - PL

KW - Raman

KW - SiGe

KW - UHV-CVD

UR - https://www.scopus.com/pages/publications/79958177771

U2 - 10.1016/j.mssp.2011.01.016

DO - 10.1016/j.mssp.2011.01.016

M3 - Journal article

AN - SCOPUS:79958177771

SN - 1369-8001

VL - 14

SP - 128

EP - 132

JO - Materials Science in Semiconductor Processing

JF - Materials Science in Semiconductor Processing

IS - 2

ER -