Abstract
The influence of growth temperature on the synthesis of Be xZn1-xO alloy films, grown on highly-mismatched Al2O3(0001) substrates, was studied by synchrotron x-ray scattering, high-resolution transmission electron microscopy and photoluminescence measurements. A single-phase BexZn 1-xO alloy with a Be concentration of x = 0.25, was obtained at the growth temperature, Tg = 400 °C, and verified by high-resolution transmission electron microscopy. It was found that high-temperature growth, Tg≥600 °C, caused phase separation, resulting in a random distribution of intermixed alloy phases. The inhomogeneity and structural fluctuations observed in the BexZn1- xO films grown at high temperatures are attributed to a variation in Be composition and mosaic distribution via atomic displacement and strain relaxation.
| Original language | English |
|---|---|
| Article number | 141902 |
| Journal | Applied Physics Letters |
| Volume | 104 |
| Issue number | 14 |
| DOIs | |
| State | Published - 2014.04.7 |
Quacquarelli Symonds(QS) Subject Topics
- Physics & Astronomy
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