Optimization of Signal to Noise Ratio in Silicon Nanowire ISFET Sensors

Hyeonsu Cho; Kihyun Kim; Jun Sik Yoon; Taiuk Rim; M. Meyyappan; Chang Ki Baek

doi:10.1109/JSEN.2017.2674672

Optimization of Signal to Noise Ratio in Silicon Nanowire ISFET Sensors

Hyeonsu Cho
, Kihyun Kim
, Jun Sik Yoon
, Taiuk Rim
, M. Meyyappan
, Chang Ki Baek

Division of Electronic Engineering

Pohang University of Science and Technology
NASA Ames Research Center

Research output: Contribution to journal › Journal article › peer-review

15 Scopus citations

Abstract

Inversion-mode (IM) and depletion-mode (DM) ion-sensitive field effect transistors (ISFETs) are investigated in terms of dc characteristics, pH response and low-frequency noise (LFN) characteristics. The dc characteristics show a low threshold voltage (V_TH) of 28 mV for the DM ISFETs, which is preferred for the long lifetime of the pseudo-reference electrode. The DM ISFETs exhibit an enhanced pH response in the sub-threshold region, which comes from the lower sub-threshold swing. The LFN analysis for both devices shows similar level of noise equivalent current (I_n.RMS) near V_TH; otherwise, a reduction of I_n.RMS is obtained in the DM ISFETs in the linear region. In addition, the signal-to-noise ratio of the DM ISFETs is improved by 82.9% compared with the IM ISFETs in the sub-threshold region. Consequently, the DM ISFETs can be a better sensor platform for low-power, portable, and high-precision performance.

Original language	English
Article number	7864382
Pages (from-to)	2792-2796
Number of pages	5
Journal	IEEE Sensors Journal
Volume	17
Issue number	9
DOIs	https://doi.org/10.1109/JSEN.2017.2674672
State	Published - 2017.05.1

Keywords

channel doping
depletion-mode
honeycomb structure
Ion-sensitive field effect transistor
low frequency noise
pH sensor

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10.1109/JSEN.2017.2674672

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@article{8e39d21499554b3fb8f4a67829bbbb1e,

title = "Optimization of Signal to Noise Ratio in Silicon Nanowire ISFET Sensors",

abstract = "Inversion-mode (IM) and depletion-mode (DM) ion-sensitive field effect transistors (ISFETs) are investigated in terms of dc characteristics, pH response and low-frequency noise (LFN) characteristics. The dc characteristics show a low threshold voltage (VTH) of 28 mV for the DM ISFETs, which is preferred for the long lifetime of the pseudo-reference electrode. The DM ISFETs exhibit an enhanced pH response in the sub-threshold region, which comes from the lower sub-threshold swing. The LFN analysis for both devices shows similar level of noise equivalent current (In.RMS) near VTH; otherwise, a reduction of In.RMS is obtained in the DM ISFETs in the linear region. In addition, the signal-to-noise ratio of the DM ISFETs is improved by 82.9\% compared with the IM ISFETs in the sub-threshold region. Consequently, the DM ISFETs can be a better sensor platform for low-power, portable, and high-precision performance.",

keywords = "channel doping, depletion-mode, honeycomb structure, Ion-sensitive field effect transistor, low frequency noise, pH sensor",

author = "Hyeonsu Cho and Kihyun Kim and Yoon, \{Jun Sik\} and Taiuk Rim and M. Meyyappan and Baek, \{Chang Ki\}",

note = "Publisher Copyright: {\textcopyright} 2001-2012 IEEE.",

year = "2017",

month = may,

day = "1",

doi = "10.1109/JSEN.2017.2674672",

language = "English",

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T1 - Optimization of Signal to Noise Ratio in Silicon Nanowire ISFET Sensors

AU - Cho, Hyeonsu

AU - Kim, Kihyun

AU - Yoon, Jun Sik

AU - Rim, Taiuk

AU - Meyyappan, M.

AU - Baek, Chang Ki

PY - 2017/5/1

Y1 - 2017/5/1

N2 - Inversion-mode (IM) and depletion-mode (DM) ion-sensitive field effect transistors (ISFETs) are investigated in terms of dc characteristics, pH response and low-frequency noise (LFN) characteristics. The dc characteristics show a low threshold voltage (VTH) of 28 mV for the DM ISFETs, which is preferred for the long lifetime of the pseudo-reference electrode. The DM ISFETs exhibit an enhanced pH response in the sub-threshold region, which comes from the lower sub-threshold swing. The LFN analysis for both devices shows similar level of noise equivalent current (In.RMS) near VTH; otherwise, a reduction of In.RMS is obtained in the DM ISFETs in the linear region. In addition, the signal-to-noise ratio of the DM ISFETs is improved by 82.9% compared with the IM ISFETs in the sub-threshold region. Consequently, the DM ISFETs can be a better sensor platform for low-power, portable, and high-precision performance.

AB - Inversion-mode (IM) and depletion-mode (DM) ion-sensitive field effect transistors (ISFETs) are investigated in terms of dc characteristics, pH response and low-frequency noise (LFN) characteristics. The dc characteristics show a low threshold voltage (VTH) of 28 mV for the DM ISFETs, which is preferred for the long lifetime of the pseudo-reference electrode. The DM ISFETs exhibit an enhanced pH response in the sub-threshold region, which comes from the lower sub-threshold swing. The LFN analysis for both devices shows similar level of noise equivalent current (In.RMS) near VTH; otherwise, a reduction of In.RMS is obtained in the DM ISFETs in the linear region. In addition, the signal-to-noise ratio of the DM ISFETs is improved by 82.9% compared with the IM ISFETs in the sub-threshold region. Consequently, the DM ISFETs can be a better sensor platform for low-power, portable, and high-precision performance.

KW - channel doping

KW - depletion-mode

KW - honeycomb structure

KW - Ion-sensitive field effect transistor

KW - low frequency noise

KW - pH sensor

UR - https://www.scopus.com/pages/publications/85018983076

U2 - 10.1109/JSEN.2017.2674672

DO - 10.1109/JSEN.2017.2674672

M3 - Journal article

AN - SCOPUS:85018983076

SN - 1530-437X

VL - 17

SP - 2792

EP - 2796

JO - IEEE Sensors Journal

JF - IEEE Sensors Journal

IS - 9

M1 - 7864382

ER -

Optimization of Signal to Noise Ratio in Silicon Nanowire ISFET Sensors

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Keywords

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