Organic resistive memory devices: Performance enhancement, integration, and advanced architectures

In recent years, organic resistive memory devices in which active organic materials possess at least two stable resistance states have been extensively investigated for their promising memory potential. From the perspective of device fabrication, their advantages include simple device structures, low fabrication costs, and printability. Furthermore, their exceptional electrical performances such as a nondestructive reading process, nonvolatility, a high ON/OFF ratio, and a fast switching speed meet the requirements for viable memory technologies. Full understanding of the underlying physics behind the interesting phenomena is still challenging. However, many studies have provided useful insights into scientific and technical issues surrounding organic resistive memory. This Feature Article begins with a summary on general characteristics of the materials, device structures, and switching mechanisms used in organic resistive devices. Strategies for performance enhancement, integration, and advanced architectures in these devices are also presented, which may open a way toward practically applicable organic memory devices. Recently, organic resistive memory devices, which have many advantages including simple device structures, low fabrication costs, and printability, have been extensively investigated. The focus of this Feature Article is on essential strategies for memory performance enhancement, high-density integration, and advanced architectural concepts necessary for future memory applications.