Orientation-dependent structural properties during growth and growth mechanism of CoO films

  • In Hui Hwang
  • , Jun Ho Kang
  • , Chae Hyun Yu
  • , Liliana Stan
  • , Cheng Jun Sun
  • , Eun Suk Jeong
  • , Sang Wook Han*
  • *Corresponding author for this work

Research output: Contribution to journalJournal articlepeer-review

Abstract

The orientation-dependent local structural properties of CoO films on sapphire substrates during growth were investigated through linearly-polarized extended X-ray absorption fine structure (EXAFS) measurements. Specifically, CoO(1 1 1) and (1 0 0) crystals with a rock-salt structure (Fm3m) were epitaxially grown on α-Al2O3(0001) and (101¯2) substrates, respectively, at 700℃ using a radio-frequency sputtering system. The local structural properties of CoO films in the in-plane and out-of-plane orientations were quantitatively determined using linearly-polarized EXAFS at the Co K-edge during growth. The EXAFS analysis revealed that during the initial stages of growth, the local structural properties exhibit significant differences compared to thick films, with short atomic distances and large (small) Debye-Waller factors observed in the out-of-plane (in-plane) orientations. The local structural strain mostly diminished when approximately 20 CoO layers accumulated on the substrate. Density functional theory (DFT) calculations further supported these findings by confirming that cobalt atoms initially form stable bonds with the sapphire surface, leading to the simultaneous growth of oxygen and cobalt layers in a coordinated manner through layer-by-layer growth.

Original languageEnglish
Article number161694
JournalApplied Surface Science
Volume682
DOIs
StatePublished - 2025.02.15

Keywords

  • CoO
  • EXAFS
  • Growth mechanism
  • Heterogeneous interface
  • RF sputtering
  • Thin film

Quacquarelli Symonds(QS) Subject Topics

  • Materials Science
  • Physics & Astronomy

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