Origins of unintentional incorporation of gallium in InAlN layers during epitaxial growth, part II: Effects of underlying layers and growth chamber conditions

Jin Soo Kim

Origins of unintentional incorporation of gallium in InAlN layers during epitaxial growth, part II: Effects of underlying layers and growth chamber conditions

Jin Soo Kim

Information Materials Engineering

Research output: Contribution to journal › Journal article › peer-review

Original language	Korean
Journal	Journal of Crystal Growth
State	Published - 2014.02.15

Cite this

@article{7361b3d80b4b4f83bf250a31a181651d,

title = "Origins of unintentional incorporation of gallium in InAlN layers during epitaxial growth, part II: Effects of underlying layers and growth chamber conditions",

author = "Kim, \{Jin Soo\}",

year = "2014",

month = feb,

day = "15",

language = "Korean",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

}