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Parallel connection of Integrated Gate Commutated Thyristors and diodes

  • Robert Hermann*
  • , Steffen Bernet
  • , Yongsug Suh
  • , Peter Steimer
  • *Corresponding author for this work
  • Technical University of Berlin
  • Technische Universität Dresden
  • ABB Group

Research output: Contribution to conferenceConference paperpeer-review

Abstract

This paper describes the parallel connection of 4.5kV Integrated Gate Commutated Thyristors (IGCTs) and diodes. The impact of varying device characteristics on the stationary current distribution of parallel connected semiconductors is investigated. Possible solutions to improve the current sharing at steady state are presented. A thermal stabilization effect of parallel connected IGCTs is discussed. Furthermore, the behaviour of parallel connected devices during switching transients is investigated experimentally in a 1.5kV, 5kA buck converter. Especially the impact of asymmetrical circuit layouts, different turn-on and turn-off delays and junction temperatures are considered. It is shown, that a substantial current derating is necessary to enable a reliable operation of parallel IGCTs and diodes.

Original languageEnglish
Title of host publicationPESC '08 - 39th IEEE Annual Power Electronics Specialists Conference - Proceedings
Pages1598-1605
Number of pages8
DOIs
StatePublished - 2008
EventPESC '08 - 39th IEEE Annual Power Electronics Specialists Conference - Rhodes, Greece
Duration: 2008.06.152008.06.19

Publication series

NamePESC Record - IEEE Annual Power Electronics Specialists Conference
ISSN (Print)0275-9306

Conference

ConferencePESC '08 - 39th IEEE Annual Power Electronics Specialists Conference
Country/TerritoryGreece
CityRhodes
Period08.06.1508.06.19

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