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Parallel synaptic design of ferroelectric tunnel junctions for neuromorphic computing

  • Taehwan Moon
  • , Hyun Jae Lee
  • , Seunggeol Nam
  • , Hagyoul Bae
  • , Duk Hyun Choe
  • , Sanghyun Jo
  • , Yun Seong Lee
  • , Yoonsang Park
  • , J. Joshua Yang*
  • , Jinseong Heo*
  • *Corresponding author for this work
  • Samsung
  • University of Southern California

Research output: Contribution to journalJournal articlepeer-review

Abstract

We propose a novel synaptic design of more efficient neuromorphic edge-computing with substantially improved linearity and extremely low variability. Specifically, a parallel arrangement of ferroelectric tunnel junctions (FTJ) with an incremental pulsing scheme provides a great improvement in linearity for synaptic weight updating by averaging weight update rates of multiple devices. To enable such design with FTJ building blocks, we have demonstrated the lowest reported variability: σ/μ = 0.036 for cycle to cycle and σ/μ = 0.032 for device among six dies across an 8 inch wafer. With such devices, we further show improved synaptic performance and pattern recognition accuracy through experiments combined with simulations.

Original languageEnglish
Article number024001
JournalNeuromorphic Computing and Engineering
Volume3
Issue number2
DOIs
StatePublished - 2023.06.1

Keywords

  • artificial synapse
  • ferroelectric tunnel junction
  • hafnium oxide

Quacquarelli Symonds(QS) Subject Topics

  • Materials Science
  • Computer Science & Information Systems
  • Engineering - Electrical & Electronic
  • Engineering - Petroleum
  • Data Science

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