Performance characteristics of InAlGaN laser diodes depending on electronblocking layer and waveguiding layer design grown by metalorganicchemical vapor deposition

Hyunsoo Kim

Performance characteristics of InAlGaN laser diodes depending on electronblocking layer and waveguiding layer design grown by metalorganicchemical vapor deposition

Hyunsoo Kim

Department of Semiconductor Science and Technology

Research output: Contribution to journal › Journal article › peer-review

Original language	Korean
Journal	Journal of Crystal Growth
State	Published - 2011.01.15

Cite this

@article{2fbe8ec8cd2a402e9be151182a138be9,

title = "Performance characteristics of InAlGaN laser diodes depending on electronblocking layer and waveguiding layer design grown by metalorganicchemical vapor deposition",

author = "Hyunsoo Kim",

year = "2011",

month = jan,

day = "15",

language = "Korean",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

}