Performance of RF MEMS switches at low temperatures

H. T. Su; I. Llamas-Garro; M. J. Lancaster; M. Prest; J. H. Park; J. M. Kim; C. W. Baek; Y. K. Kim

doi:10.1049/el:20062551

Performance of RF MEMS switches at low temperatures

H. T. Su^*
, I. Llamas-Garro
, M. J. Lancaster
, M. Prest
, J. H. Park
, J. M. Kim
, C. W. Baek
, Y. K. Kim

^*Corresponding author for this work

Division of Electronic Engineering

Swinburne University of Technology
Instituto Nacional de Astrofisica Optica y Electronica
University of Birmingham
LG Corporation
Seoul National University
Chung-Ang University

Research output: Contribution to journal › Journal article › peer-review

16 Scopus citations

Abstract

The actuation voltage of microelectromechanical system (MEMS) metal switches was investigated at temperatures ranging from 10 to 290K. The investigation shows a 50 increase in the actuation voltage at low temperature. A comparison has been made using a published model and showed similar increment of actuation voltage at low temperature.

Original language	English
Pages (from-to)	1219-1221
Number of pages	3
Journal	Electronics Letters
Volume	42
Issue number	21
DOIs	https://doi.org/10.1049/el:20062551
State	Published - 2006

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10.1049/el:20062551

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@article{00e2946eeef44fe0801d9ffd506b4b29,

title = "Performance of RF MEMS switches at low temperatures",

abstract = "The actuation voltage of microelectromechanical system (MEMS) metal switches was investigated at temperatures ranging from 10 to 290K. The investigation shows a 50 increase in the actuation voltage at low temperature. A comparison has been made using a published model and showed similar increment of actuation voltage at low temperature.",

author = "Su, \{H. T.\} and I. Llamas-Garro and Lancaster, \{M. J.\} and M. Prest and Park, \{J. H.\} and Kim, \{J. M.\} and Baek, \{C. W.\} and Kim, \{Y. K.\}",

year = "2006",

doi = "10.1049/el:20062551",

language = "English",

volume = "42",

pages = "1219--1221",

journal = "Electronics Letters",

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TY - JOUR

T1 - Performance of RF MEMS switches at low temperatures

AU - Su, H. T.

AU - Llamas-Garro, I.

AU - Lancaster, M. J.

AU - Prest, M.

AU - Park, J. H.

AU - Kim, J. M.

AU - Baek, C. W.

AU - Kim, Y. K.

PY - 2006

Y1 - 2006

N2 - The actuation voltage of microelectromechanical system (MEMS) metal switches was investigated at temperatures ranging from 10 to 290K. The investigation shows a 50 increase in the actuation voltage at low temperature. A comparison has been made using a published model and showed similar increment of actuation voltage at low temperature.

AB - The actuation voltage of microelectromechanical system (MEMS) metal switches was investigated at temperatures ranging from 10 to 290K. The investigation shows a 50 increase in the actuation voltage at low temperature. A comparison has been made using a published model and showed similar increment of actuation voltage at low temperature.

UR - https://www.scopus.com/pages/publications/33749988492

U2 - 10.1049/el:20062551

DO - 10.1049/el:20062551

M3 - Journal article

AN - SCOPUS:33749988492

SN - 0013-5194

VL - 42

SP - 1219

EP - 1221

JO - Electronics Letters

JF - Electronics Letters

IS - 21

ER -

Performance of RF MEMS switches at low temperatures

Abstract

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