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Phase identification of vanadium oxide thin films prepared by atomic layer deposition using X-ray absorption spectroscopy

  • Yejin Kim
  • , Gwang Yeom Song
  • , Raju Nandi
  • , Jae Yu Cho
  • , Jaeyeong Heo*
  • , Deok Yong Cho*
  • *Corresponding author for this work
  • Jeonbuk National University
  • Chonnam National University

Research output: Contribution to journalJournal articlepeer-review

Abstract

The chemical and local structures of vanadium oxide (VOx) thin films prepared by atomic layer deposition (ALD) were investigated by soft X-ray absorption spectroscopy. It is shown that the as-deposited film was a mixture of VO2 and V2O5 in disordered form, while the chemistry changed significantly after heat treatment, subject to the different gas environment. Forming gas (95% N2 + 5% H2) annealing resulted in a VO2 composition, consisting mostly of the VO2 (B) phase with small amount of the VO2 (M) phase, whereas O2 annealing resulted in the V2O5 phase. An X-ray circular magnetic dichroism study further revealed the absence of ferromagnetic ordering, confirming the absence of oxygen vacancies despite the reduction of V ions in VO2 (V4+) with respect to the precursor used in the ALD (V5+). This implies that the prevalence of VO2 in the ALD films cannot be attributed to a simple oxygen-deficiency-related reduction scheme but should be explained by the metastability of the local VO2 structures.

Original languageEnglish
Pages (from-to)26588-26593
Number of pages6
JournalRSC Advances
Volume10
Issue number44
DOIs
StatePublished - 2020.07.15

Quacquarelli Symonds(QS) Subject Topics

  • Engineering - Chemical
  • Chemistry

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