Photocurrent characteristics of oxygenated fullerene thin film

Sung Chae Yang; Tetsu Mieno

Photocurrent characteristics of oxygenated fullerene thin film

Sung Chae Yang^*
, Tetsu Mieno

^*Corresponding author for this work

Department of Electrical Engineering

Shizuoka University
Nagaoka University of Technology

Research output: Conference(x) › Paper › peer-review

Abstract

In order to obtain the higher photocurrent in metal/insulator/semiconductor junction cells, oxygenated fullerene thin films are used as the insulator thin film. The highly oxygenated fullerene thin films are obtained by using RF O ₂ plasma with cooling system. From the experimental results, it is found that oxygenated fullerene thin films, C ₆₀O _x (x=8, 16, 24, 38, 50 etc.), are obtained by using a laser-desorption time-of-flight mass spectrometer (TOF-MS). By using the 200 nm in thick multilayer fullerene junction film, the photocurrent becomes 30 times larger that of normal fullerene.

Original language	English
Pages	805-808
Number of pages	4
State	Published - 2000
Event	2000 13th International Conference on High-Power Particle Beams, BEAMS 2000 - Nagaoka, Japan Duration: 2000.06.25 → 2000.06.30

Conference

Conference	2000 13th International Conference on High-Power Particle Beams, BEAMS 2000
Country/Territory	Japan
City	Nagaoka
Period	00.06.25 → 00.06.30

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Keywords

multiplayer film
oxygenated fullerene
photocurrent
photoelectric device
RF plasma

Cite this

@conference{3cffed0457a0471684609c54572062c3,

title = "Photocurrent characteristics of oxygenated fullerene thin film",

abstract = "In order to obtain the higher photocurrent in metal/insulator/semiconductor junction cells, oxygenated fullerene thin films are used as the insulator thin film. The highly oxygenated fullerene thin films are obtained by using RF O 2 plasma with cooling system. From the experimental results, it is found that oxygenated fullerene thin films, C 60O x (x=8, 16, 24, 38, 50 etc.), are obtained by using a laser-desorption time-of-flight mass spectrometer (TOF-MS). By using the 200 nm in thick multilayer fullerene junction film, the photocurrent becomes 30 times larger that of normal fullerene.",

keywords = "multiplayer film, oxygenated fullerene, photocurrent, photoelectric device, RF plasma",

author = "Yang, \{Sung Chae\} and Tetsu Mieno",

year = "2000",

language = "English",

pages = "805--808",

note = "2000 13th International Conference on High-Power Particle Beams, BEAMS 2000 ; Conference date: 25-06-2000 Through 30-06-2000",

}

TY - CONF

T1 - Photocurrent characteristics of oxygenated fullerene thin film

AU - Yang, Sung Chae

AU - Mieno, Tetsu

PY - 2000

Y1 - 2000

N2 - In order to obtain the higher photocurrent in metal/insulator/semiconductor junction cells, oxygenated fullerene thin films are used as the insulator thin film. The highly oxygenated fullerene thin films are obtained by using RF O 2 plasma with cooling system. From the experimental results, it is found that oxygenated fullerene thin films, C 60O x (x=8, 16, 24, 38, 50 etc.), are obtained by using a laser-desorption time-of-flight mass spectrometer (TOF-MS). By using the 200 nm in thick multilayer fullerene junction film, the photocurrent becomes 30 times larger that of normal fullerene.

AB - In order to obtain the higher photocurrent in metal/insulator/semiconductor junction cells, oxygenated fullerene thin films are used as the insulator thin film. The highly oxygenated fullerene thin films are obtained by using RF O 2 plasma with cooling system. From the experimental results, it is found that oxygenated fullerene thin films, C 60O x (x=8, 16, 24, 38, 50 etc.), are obtained by using a laser-desorption time-of-flight mass spectrometer (TOF-MS). By using the 200 nm in thick multilayer fullerene junction film, the photocurrent becomes 30 times larger that of normal fullerene.

KW - multiplayer film

KW - oxygenated fullerene

KW - photocurrent

KW - photoelectric device

KW - RF plasma

UR - https://www.scopus.com/pages/publications/84864540963

M3 - Paper

AN - SCOPUS:84864540963

SP - 805

EP - 808

T2 - 2000 13th International Conference on High-Power Particle Beams, BEAMS 2000

Y2 - 25 June 2000 through 30 June 2000

ER -

Photocurrent characteristics of oxygenated fullerene thin film

Abstract

Conference

UN SDGs

Keywords

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