@inproceedings{d3fa73e7d1934b9a836f065d414ee73b,
title = "Photocurrent of Si0.8Ge0.2/Si strained multiple quantum-wells grown by using UHV-CVD",
abstract = "The optical property was studied for the Si0.8Ge 0.2/Si strained multiple quantum-well (MQW) structure grown by using ultra high vacuum chemical vapor deposition (UHV-CVD). The structural properties of the Si0.8Ge0.2/Si strained MQW were investigated using high-resolution X-ray diffraction (HR-XRD). The photocurrent spectrum of a Si0.8Ge0.2/Si strained MQW was measured at the room-temperature and the liquid-nitrogen temperature. For Si 0.8Ge0.2/Si strained MQW, the transition peaks related to the MQW region observed in the photocurrent spectrum were preliminarily assigned to electron-heavy hole (e-hh) and electron-light hole (e-lh) fundamental excitionic transitions.",
author = "Kim, \{T. S.\} and Choi, \{S. S.\} and Jeong, \{T. S.\} and S. Kang and Shim, \{K. H.\}",
year = "2009",
doi = "10.1149/1.2986847",
language = "English",
isbn = "9781566776561",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "10",
pages = "875--880",
booktitle = "ECS Transactions - SiGe, Ge, and Related Compounds 3",
edition = "10",
note = "3rd SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 214th ECS Meeting ; Conference date: 12-10-2008 Through 17-10-2008",
}