Photoenhanced electrochemical etching for p-GaN

Jeon Wook Yang; Byung Mok Kim; Chang Joo Yoon; Gye Mo Yang; Hyung-Jae Lee Hyung-Jae

doi:10.1049/el:20000036

Photoenhanced electrochemical etching for p-GaN

Jeon Wook Yang
, Byung Mok Kim
, Chang Joo Yoon
, Gye Mo Yang
, Hyung-Jae Lee Hyung-Jae

Department of Semiconductor Science and Technology

Jeonbuk National University

Research output: Contribution to journal › Journal article › peer-review

14 Scopus citations

Abstract

An effective wet chemical etching method for p-GaN is proposed based on the surface band bending of the semiconductor. The metal organic chemical vapour deposition (MOCVD) grown p-GaN was successfully etched by biasing the substrate below -3 V during photoenhanced electrochemical etching using KOH solution and Hg lamp illumination. The etch rate increased with increasing negative voltage and was as high as 2.1 μm/min at -10 V.

Original language	English
Pages (from-to)	88-90
Number of pages	3
Journal	Electronics Letters
Volume	36
Issue number	1
DOIs	https://doi.org/10.1049/el:20000036
State	Published - 2000.01.6

Quacquarelli Symonds(QS) Subject Topics

Engineering - Electrical & Electronic
Engineering - Petroleum

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10.1049/el:20000036

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title = "Photoenhanced electrochemical etching for p-GaN",

abstract = "An effective wet chemical etching method for p-GaN is proposed based on the surface band bending of the semiconductor. The metal organic chemical vapour deposition (MOCVD) grown p-GaN was successfully etched by biasing the substrate below -3 V during photoenhanced electrochemical etching using KOH solution and Hg lamp illumination. The etch rate increased with increasing negative voltage and was as high as 2.1 μm/min at -10 V.",

author = "Yang, \{Jeon Wook\} and Kim, \{Byung Mok\} and Yoon, \{Chang Joo\} and Yang, \{Gye Mo\} and \{Lee Hyung-Jae\}, Hyung-Jae",

year = "2000",

month = jan,

day = "6",

doi = "10.1049/el:20000036",

language = "English",

volume = "36",

pages = "88--90",

journal = "Electronics Letters",

issn = "0013-5194",

number = "1",

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TY - JOUR

T1 - Photoenhanced electrochemical etching for p-GaN

AU - Yang, Jeon Wook

AU - Kim, Byung Mok

AU - Yoon, Chang Joo

AU - Yang, Gye Mo

AU - Lee Hyung-Jae, Hyung-Jae

PY - 2000/1/6

Y1 - 2000/1/6

N2 - An effective wet chemical etching method for p-GaN is proposed based on the surface band bending of the semiconductor. The metal organic chemical vapour deposition (MOCVD) grown p-GaN was successfully etched by biasing the substrate below -3 V during photoenhanced electrochemical etching using KOH solution and Hg lamp illumination. The etch rate increased with increasing negative voltage and was as high as 2.1 μm/min at -10 V.

AB - An effective wet chemical etching method for p-GaN is proposed based on the surface band bending of the semiconductor. The metal organic chemical vapour deposition (MOCVD) grown p-GaN was successfully etched by biasing the substrate below -3 V during photoenhanced electrochemical etching using KOH solution and Hg lamp illumination. The etch rate increased with increasing negative voltage and was as high as 2.1 μm/min at -10 V.

UR - https://www.scopus.com/pages/publications/0033640369

U2 - 10.1049/el:20000036

DO - 10.1049/el:20000036

M3 - Journal article

AN - SCOPUS:0033640369

SN - 0013-5194

VL - 36

SP - 88

EP - 90

JO - Electronics Letters

JF - Electronics Letters

IS - 1

ER -

Photoenhanced electrochemical etching for p-GaN

Abstract

Quacquarelli Symonds(QS) Subject Topics

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