Photon-stimulated H desorption from several H/Si(001) surfaces for resistless lithography

Cheolho Jeon; Chong Yun Park; Chan Cuk Hwang; Han Na Hwang; Hajin Song; Hyun Joon Shin; Sangwoon Moon; Sukmin Chung

doi:10.3938/jkps.50.1745

Photon-stimulated H desorption from several H/Si(001) surfaces for resistless lithography

Cheolho Jeon^*
, Chong Yun Park
, Chan Cuk Hwang
, Han Na Hwang
, Hajin Song
, Hyun Joon Shin
, Sangwoon Moon
, Sukmin Chung

^*Corresponding author for this work

Department of Physics

Sungkyunkwan University
Pohang University of Science and Technology

Research output: Contribution to journal › Journal article › peer-review

4 Scopus citations

Abstract

Synchrotron radiation photoemission spectroscopy (SRPES) and scanning photoelectron microscopy (SPEM) have been used to investigate photon-stimulated H desorption from several Ç-terminated Si(001) surfaces for resistless lithography. H was desorbed from a well-defined Si(001)2×1:H surface upon unmonochromatized photon irradiation, but monochromatic photons (100 ∼ 650 eV) did not break H-Si bonds regardless of the incident photon flux per unit area. Photons of ∼7.9 eV or secondary electrons might induce H desorption upon unmonochromatized photon irradiation. On the other hand, contaminated H/Si(001) surfaces were affected by extreme ultraviolet (EUV) (11.8 nm) irradiation. Here, we demonstrate that minute patterns can be formed through the photochemical reaction.

Original language	English
Pages (from-to)	1745-1749
Number of pages	5
Journal	Journal of the Korean Physical Society
Volume	50
Issue number	6
DOIs	https://doi.org/10.3938/jkps.50.1745
State	Published - 2007.06

Keywords

EUV
PES
PSD
Resistless lithography
SPEM

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10.3938/jkps.50.1745

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@article{007cea3646634b2686f4dcbfc4193785,

title = "Photon-stimulated H desorption from several H/Si(001) surfaces for resistless lithography",

abstract = "Synchrotron radiation photoemission spectroscopy (SRPES) and scanning photoelectron microscopy (SPEM) have been used to investigate photon-stimulated H desorption from several {\c C}-terminated Si(001) surfaces for resistless lithography. H was desorbed from a well-defined Si(001)2×1:H surface upon unmonochromatized photon irradiation, but monochromatic photons (100 ∼ 650 eV) did not break H-Si bonds regardless of the incident photon flux per unit area. Photons of ∼7.9 eV or secondary electrons might induce H desorption upon unmonochromatized photon irradiation. On the other hand, contaminated H/Si(001) surfaces were affected by extreme ultraviolet (EUV) (11.8 nm) irradiation. Here, we demonstrate that minute patterns can be formed through the photochemical reaction.",

keywords = "EUV, PES, PSD, Resistless lithography, SPEM",

author = "Cheolho Jeon and Park, \{Chong Yun\} and Hwang, \{Chan Cuk\} and Hwang, \{Han Na\} and Hajin Song and Shin, \{Hyun Joon\} and Sangwoon Moon and Sukmin Chung",

year = "2007",

month = jun,

doi = "10.3938/jkps.50.1745",

language = "English",

volume = "50",

pages = "1745--1749",

journal = "Journal of the Korean Physical Society",

issn = "0374-4884",

number = "6",

}

TY - JOUR

T1 - Photon-stimulated H desorption from several H/Si(001) surfaces for resistless lithography

AU - Jeon, Cheolho

AU - Park, Chong Yun

AU - Hwang, Chan Cuk

AU - Hwang, Han Na

AU - Song, Hajin

AU - Shin, Hyun Joon

AU - Moon, Sangwoon

AU - Chung, Sukmin

PY - 2007/6

Y1 - 2007/6

N2 - Synchrotron radiation photoemission spectroscopy (SRPES) and scanning photoelectron microscopy (SPEM) have been used to investigate photon-stimulated H desorption from several Ç-terminated Si(001) surfaces for resistless lithography. H was desorbed from a well-defined Si(001)2×1:H surface upon unmonochromatized photon irradiation, but monochromatic photons (100 ∼ 650 eV) did not break H-Si bonds regardless of the incident photon flux per unit area. Photons of ∼7.9 eV or secondary electrons might induce H desorption upon unmonochromatized photon irradiation. On the other hand, contaminated H/Si(001) surfaces were affected by extreme ultraviolet (EUV) (11.8 nm) irradiation. Here, we demonstrate that minute patterns can be formed through the photochemical reaction.

AB - Synchrotron radiation photoemission spectroscopy (SRPES) and scanning photoelectron microscopy (SPEM) have been used to investigate photon-stimulated H desorption from several Ç-terminated Si(001) surfaces for resistless lithography. H was desorbed from a well-defined Si(001)2×1:H surface upon unmonochromatized photon irradiation, but monochromatic photons (100 ∼ 650 eV) did not break H-Si bonds regardless of the incident photon flux per unit area. Photons of ∼7.9 eV or secondary electrons might induce H desorption upon unmonochromatized photon irradiation. On the other hand, contaminated H/Si(001) surfaces were affected by extreme ultraviolet (EUV) (11.8 nm) irradiation. Here, we demonstrate that minute patterns can be formed through the photochemical reaction.

KW - EUV

KW - PES

KW - PSD

KW - Resistless lithography

KW - SPEM

UR - https://www.scopus.com/pages/publications/34547268961

U2 - 10.3938/jkps.50.1745

DO - 10.3938/jkps.50.1745

M3 - Journal article

AN - SCOPUS:34547268961

SN - 0374-4884

VL - 50

SP - 1745

EP - 1749

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

IS - 6

ER -

Photon-stimulated H desorption from several H/Si(001) surfaces for resistless lithography

Abstract

Keywords

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