Plasma chemistries for dry etching of SrBi 2Ta 2O 9 thin films

J. S. Park; Y. H. Im; R. J. Choi; Y. B. Hahn; C. S. Choi; S. H. Lee; J. K. Lee

doi:10.1149/1.1340917

Plasma chemistries for dry etching of SrBi ₂Ta ₂O ₉ thin films

J. S. Park
, Y. H. Im
, R. J. Choi
, Y. B. Hahn^*
, C. S. Choi
, S. H. Lee
, J. K. Lee

^*Corresponding author for this work

Division of Chemical Engineering

A School of Chemical Engineering and Technology
Jeonbuk National University
Korea Institute of Science and Technology

Research output: Contribution to journal › Journal article › peer-review

18 Scopus citations

Abstract

SrBi ₂Ta ₂O ₉ (SBT) thin films were etched in a planar type inductively coupled plasma (ICP) etcher with different chemistries of Cl ₂/Ar, Cl ₂/NF ₃/Ar, and Cl ₂/NF ₃/O ₂/Ar. The etch rate was a strong function of gas concentration, ICP source power, and rf chuck power. Cl ₂/NF ₃/Ar and Cl ₂/NF ₃/O ₂/Ar plasmas showed maximum etch rates of ∼1600 Å/min at 5 mTorr, 700 W ICP power, and 150 W rf chuck power. Electrical properties of the SBT films were dependent on the plasma chemistry employed; Cl ₂/NF ₃/O ₂/Ar showed the least damage in the films and resulted in the best overall P-E hysteresis loops compared to other chemistries.

Original language	English
Pages (from-to)	G17-G19
Journal	Electrochemical and Solid-State Letters
Volume	4
Issue number	2
DOIs	https://doi.org/10.1149/1.1340917
State	Published - 2001.02

Quacquarelli Symonds(QS) Subject Topics

Materials Science
Engineering - Electrical & Electronic
Engineering - Petroleum
Engineering - Chemical
Chemistry

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title = "Plasma chemistries for dry etching of SrBi 2Ta 2O 9 thin films",

abstract = "SrBi 2Ta 2O 9 (SBT) thin films were etched in a planar type inductively coupled plasma (ICP) etcher with different chemistries of Cl 2/Ar, Cl 2/NF 3/Ar, and Cl 2/NF 3/O 2/Ar. The etch rate was a strong function of gas concentration, ICP source power, and rf chuck power. Cl 2/NF 3/Ar and Cl 2/NF 3/O 2/Ar plasmas showed maximum etch rates of ∼1600 {\AA}/min at 5 mTorr, 700 W ICP power, and 150 W rf chuck power. Electrical properties of the SBT films were dependent on the plasma chemistry employed; Cl 2/NF 3/O 2/Ar showed the least damage in the films and resulted in the best overall P-E hysteresis loops compared to other chemistries.",

author = "Park, \{J. S.\} and Im, \{Y. H.\} and Choi, \{R. J.\} and Hahn, \{Y. B.\} and Choi, \{C. S.\} and Lee, \{S. H.\} and Lee, \{J. K.\}",

year = "2001",

month = feb,

doi = "10.1149/1.1340917",

language = "English",

volume = "4",

pages = "G17--G19",

journal = "Electrochemical and Solid-State Letters",

issn = "1099-0062",

number = "2",

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TY - JOUR

T1 - Plasma chemistries for dry etching of SrBi 2Ta 2O 9 thin films

AU - Park, J. S.

AU - Im, Y. H.

AU - Choi, R. J.

AU - Hahn, Y. B.

AU - Choi, C. S.

AU - Lee, S. H.

AU - Lee, J. K.

PY - 2001/2

Y1 - 2001/2

N2 - SrBi 2Ta 2O 9 (SBT) thin films were etched in a planar type inductively coupled plasma (ICP) etcher with different chemistries of Cl 2/Ar, Cl 2/NF 3/Ar, and Cl 2/NF 3/O 2/Ar. The etch rate was a strong function of gas concentration, ICP source power, and rf chuck power. Cl 2/NF 3/Ar and Cl 2/NF 3/O 2/Ar plasmas showed maximum etch rates of ∼1600 Å/min at 5 mTorr, 700 W ICP power, and 150 W rf chuck power. Electrical properties of the SBT films were dependent on the plasma chemistry employed; Cl 2/NF 3/O 2/Ar showed the least damage in the films and resulted in the best overall P-E hysteresis loops compared to other chemistries.

AB - SrBi 2Ta 2O 9 (SBT) thin films were etched in a planar type inductively coupled plasma (ICP) etcher with different chemistries of Cl 2/Ar, Cl 2/NF 3/Ar, and Cl 2/NF 3/O 2/Ar. The etch rate was a strong function of gas concentration, ICP source power, and rf chuck power. Cl 2/NF 3/Ar and Cl 2/NF 3/O 2/Ar plasmas showed maximum etch rates of ∼1600 Å/min at 5 mTorr, 700 W ICP power, and 150 W rf chuck power. Electrical properties of the SBT films were dependent on the plasma chemistry employed; Cl 2/NF 3/O 2/Ar showed the least damage in the films and resulted in the best overall P-E hysteresis loops compared to other chemistries.

UR - https://www.scopus.com/pages/publications/0035262728

U2 - 10.1149/1.1340917

DO - 10.1149/1.1340917

M3 - Journal article

AN - SCOPUS:0035262728

SN - 1099-0062

VL - 4

SP - G17-G19

JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

IS - 2

ER -

Plasma chemistries for dry etching of SrBi ₂Ta ₂O ₉ thin films

Abstract

Quacquarelli Symonds(QS) Subject Topics

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