Polarization of light emission by 460 nm GaInNGaN light-emitting diodes grown on (0001) oriented sapphire substrates

Martin F. Schubert; Sameer Chhajed; Jong Kyu Kim; E. Fred Schubert; Jaehee Cho

doi:10.1063/1.2757594

Polarization of light emission by 460 nm GaInNGaN light-emitting diodes grown on (0001) oriented sapphire substrates

Martin F. Schubert^*
, Sameer Chhajed
, Jong Kyu Kim
, E. Fred Schubert
, Jaehee Cho

^*Corresponding author for this work

Department of Semiconductor Science and Technology

Rensselaer Polytechnic Institute
Samsung

Research output: Contribution to journal › Journal article › peer-review

78 Scopus citations

Abstract

Measurements on the polarization of top- and side-emitted light as a function of direction are performed for 460 nm GaInN unpackaged and packaged light-emitting diode (LED) chips with a multiquantum well (MQW) GaInNGaN active region grown on (0001) oriented sapphire substrates. Side emission is found to be highly polarized with the electric field in the plane of the MQW. Intensity ratios for in-plane to normal-to-plane polarization reach values as high as 7:1, while the total intensity for the in-plane polarization is more than twice as large compared to the normal-to-plane polarization. Despite these measured polarization characteristics, conventional packaged LEDs are found to be virtually unpolarized due to packaging.

Original language	English
Article number	051117
Journal	Applied Physics Letters
Volume	91
Issue number	5
DOIs	https://doi.org/10.1063/1.2757594
State	Published - 2007

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title = "Polarization of light emission by 460 nm GaInNGaN light-emitting diodes grown on (0001) oriented sapphire substrates",

abstract = "Measurements on the polarization of top- and side-emitted light as a function of direction are performed for 460 nm GaInN unpackaged and packaged light-emitting diode (LED) chips with a multiquantum well (MQW) GaInNGaN active region grown on (0001) oriented sapphire substrates. Side emission is found to be highly polarized with the electric field in the plane of the MQW. Intensity ratios for in-plane to normal-to-plane polarization reach values as high as 7:1, while the total intensity for the in-plane polarization is more than twice as large compared to the normal-to-plane polarization. Despite these measured polarization characteristics, conventional packaged LEDs are found to be virtually unpolarized due to packaging.",

author = "Schubert, \{Martin F.\} and Sameer Chhajed and Kim, \{Jong Kyu\} and \{Fred Schubert\}, E. and Jaehee Cho",

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language = "English",

volume = "91",

journal = "Applied Physics Letters",

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T1 - Polarization of light emission by 460 nm GaInNGaN light-emitting diodes grown on (0001) oriented sapphire substrates

AU - Schubert, Martin F.

AU - Chhajed, Sameer

AU - Kim, Jong Kyu

AU - Fred Schubert, E.

AU - Cho, Jaehee

PY - 2007

Y1 - 2007

N2 - Measurements on the polarization of top- and side-emitted light as a function of direction are performed for 460 nm GaInN unpackaged and packaged light-emitting diode (LED) chips with a multiquantum well (MQW) GaInNGaN active region grown on (0001) oriented sapphire substrates. Side emission is found to be highly polarized with the electric field in the plane of the MQW. Intensity ratios for in-plane to normal-to-plane polarization reach values as high as 7:1, while the total intensity for the in-plane polarization is more than twice as large compared to the normal-to-plane polarization. Despite these measured polarization characteristics, conventional packaged LEDs are found to be virtually unpolarized due to packaging.

AB - Measurements on the polarization of top- and side-emitted light as a function of direction are performed for 460 nm GaInN unpackaged and packaged light-emitting diode (LED) chips with a multiquantum well (MQW) GaInNGaN active region grown on (0001) oriented sapphire substrates. Side emission is found to be highly polarized with the electric field in the plane of the MQW. Intensity ratios for in-plane to normal-to-plane polarization reach values as high as 7:1, while the total intensity for the in-plane polarization is more than twice as large compared to the normal-to-plane polarization. Despite these measured polarization characteristics, conventional packaged LEDs are found to be virtually unpolarized due to packaging.

UR - https://www.scopus.com/pages/publications/34547655643

U2 - 10.1063/1.2757594

DO - 10.1063/1.2757594

M3 - Journal article

AN - SCOPUS:34547655643

SN - 0003-6951

VL - 91

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 5

M1 - 051117

ER -

Polarization of light emission by 460 nm GaInNGaN light-emitting diodes grown on (0001) oriented sapphire substrates

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