Polarized light emission from GaInN light-emitting diodes embedded with subwavelength aluminum wire-grid polarizers

Ming Ma; David S. Meyaard; Qifeng Shan; Jaehee Cho; E. Fred Schubert; Gi Bum Kim; Min Ho Kim; Cheolsoo Sone

doi:10.1063/1.4744422

Polarized light emission from GaInN light-emitting diodes embedded with subwavelength aluminum wire-grid polarizers

Ming Ma^*
, David S. Meyaard
, Qifeng Shan
, Jaehee Cho
, E. Fred Schubert
, Gi Bum Kim
, Min Ho Kim
, Cheolsoo Sone

^*Corresponding author for this work

Department of Semiconductor Science and Technology

Rensselaer Polytechnic Institute
Samsung

Research output: Contribution to journal › Journal article › peer-review

42 Scopus citations

Abstract

We demonstrate a back-emitting (sapphire-substrate emitting) linearly polarized GaInN light-emitting diode (LED) embedded with a subwavelength-sized aluminum wire-grid polarizer (WGP). Rigorous coupled wave analysis is implemented to study the polarization characteristics of such a WGP LED. The aluminum nanowire grating with a period of 150 nm is located on the sapphire backside of a GaInN LED structure and is fabricated by electron-beam lithography and inductively coupled plasma reactive-ion etching. A polarization ratio of 0.96 is demonstrated for a WGP GaInN LED in good agreement with simulation results.

Original language	English
Article number	061103
Journal	Applied Physics Letters
Volume	101
Issue number	6
DOIs	https://doi.org/10.1063/1.4744422
State	Published - 2012.08.6

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@article{db8f087a194049d2beb51ba11dadc090,

title = "Polarized light emission from GaInN light-emitting diodes embedded with subwavelength aluminum wire-grid polarizers",

abstract = "We demonstrate a back-emitting (sapphire-substrate emitting) linearly polarized GaInN light-emitting diode (LED) embedded with a subwavelength-sized aluminum wire-grid polarizer (WGP). Rigorous coupled wave analysis is implemented to study the polarization characteristics of such a WGP LED. The aluminum nanowire grating with a period of 150 nm is located on the sapphire backside of a GaInN LED structure and is fabricated by electron-beam lithography and inductively coupled plasma reactive-ion etching. A polarization ratio of 0.96 is demonstrated for a WGP GaInN LED in good agreement with simulation results.",

author = "Ming Ma and Meyaard, \{David S.\} and Qifeng Shan and Jaehee Cho and \{Fred Schubert\}, E. and Kim, \{Gi Bum\} and Kim, \{Min Ho\} and Cheolsoo Sone",

year = "2012",

month = aug,

day = "6",

doi = "10.1063/1.4744422",

language = "English",

volume = "101",

journal = "Applied Physics Letters",

issn = "0003-6951",

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TY - JOUR

T1 - Polarized light emission from GaInN light-emitting diodes embedded with subwavelength aluminum wire-grid polarizers

AU - Ma, Ming

AU - Meyaard, David S.

AU - Shan, Qifeng

AU - Cho, Jaehee

AU - Fred Schubert, E.

AU - Kim, Gi Bum

AU - Kim, Min Ho

AU - Sone, Cheolsoo

PY - 2012/8/6

Y1 - 2012/8/6

N2 - We demonstrate a back-emitting (sapphire-substrate emitting) linearly polarized GaInN light-emitting diode (LED) embedded with a subwavelength-sized aluminum wire-grid polarizer (WGP). Rigorous coupled wave analysis is implemented to study the polarization characteristics of such a WGP LED. The aluminum nanowire grating with a period of 150 nm is located on the sapphire backside of a GaInN LED structure and is fabricated by electron-beam lithography and inductively coupled plasma reactive-ion etching. A polarization ratio of 0.96 is demonstrated for a WGP GaInN LED in good agreement with simulation results.

AB - We demonstrate a back-emitting (sapphire-substrate emitting) linearly polarized GaInN light-emitting diode (LED) embedded with a subwavelength-sized aluminum wire-grid polarizer (WGP). Rigorous coupled wave analysis is implemented to study the polarization characteristics of such a WGP LED. The aluminum nanowire grating with a period of 150 nm is located on the sapphire backside of a GaInN LED structure and is fabricated by electron-beam lithography and inductively coupled plasma reactive-ion etching. A polarization ratio of 0.96 is demonstrated for a WGP GaInN LED in good agreement with simulation results.

UR - https://www.scopus.com/pages/publications/84865151544

U2 - 10.1063/1.4744422

DO - 10.1063/1.4744422

M3 - Journal article

AN - SCOPUS:84865151544

SN - 0003-6951

VL - 101

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 6

M1 - 061103

ER -

Polarized light emission from GaInN light-emitting diodes embedded with subwavelength aluminum wire-grid polarizers

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