Post-growth annealing effects of mg doped GaAs epitaxial layers on microstructural and optical properties

The post-growth thermal annealing effects of Mg doped GaAs epitaxial layers on the microstruc- tural and optical properties grown by molecular beam epitaxy (MBE) have been investigated. The properties of Mg doped GaAs are estimated after the process of rapid thermal annealing (RTA) in the temperature range of 600∼750 °C. The photoluminescence (PL) peak position of as-grown sample blueshifted from 1.473 to 1.485 eV as well as the pronounced enhancement in PL intensity by annealing at 600 °C. In the sample grown at the temperature of 7" _s= 475 °C, the full-width at half maximum (FWHM) of double crystal X-ray diffraction (DCXRD) decreased form 27 to 8 arcsec with increasing of annealing temperature (600∼700 °C). The crystalline quality variation of Mg doped GaAs layers by RTA is greatly dependent upon the doping level. Copywright