Precise analysis of Si/graded-Si1-xGex/Si 1-xGex heterostructure films grown by reduced pressure chemical vapor deposition using spectroscopic ellipsometry

J. J. Seo; S. S. Choi; H. D. Yang; J. Y. Kim; J. W. Yang; T. H. Han; D. H. Cho; K. H. Shim

doi:10.1149/1.2355815

Precise analysis of Si/graded-Si_1-xGe_x/Si _1-xGe_x heterostructure films grown by reduced pressure chemical vapor deposition using spectroscopic ellipsometry

J. J. Seo^*
, S. S. Choi
, H. D. Yang
, J. Y. Kim
, J. W. Yang
, T. H. Han
, D. H. Cho
, K. H. Shim

^*Corresponding author for this work

Department of Semiconductor Science and Technology

Jeonbuk National University
R and D Center

Research output: Contribution to conference › Conference paper › peer-review

Abstract

Si/graded-Si_1-xGe_x/Si_1-xGe_x heterostructures were grown by reduced pressure chemical vapor deposition on Si (100)&(111) substrates at different temperatures, and their structural properties were investigated using spectroscopic ellipsmetry and secondary ion mass spectroscopy. The variation of growth temperature was observed to alter each part of Si/graded-Si_1-xGe_x/Si_1-xGe _x heterostructure growth, and the changes could be clearly addressed according to the evolutions of ellipsometry spectra. As an in line monitoring tool, the spectroscopic ellipsometry presented excellent capability of accuracy ranging ±1.2°C in substrate temperature and correspondingly <5% in current gain for heterojunction bipolar transistor with the Si/graded-Si _1-xGe_x/Si_1-xGe_x base epi layers. copyright The Electrochemical Society.

Original language	English
Title of host publication	SiGe and Ge
Subtitle of host publication	Materials, Processing, and Devices
Publisher	Electrochemical Society Inc.
Pages	231-242
Number of pages	12
Edition	7
ISBN (Electronic)	1566775078
DOIs	https://doi.org/10.1149/1.2355815
State	Published - 2006
Event	SiGe and Ge: Materials, Processing, and Devices - 210th Electrochemical Society Meeting - Cancun, Mexico Duration: 2006.10.29 → 2006.11.3

Publication series

Name	ECS Transactions
Number	7
Volume	3
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Conference

Conference	SiGe and Ge: Materials, Processing, and Devices - 210th Electrochemical Society Meeting
Country/Territory	Mexico
City	Cancun
Period	06.10.29 → 06.11.3

Quacquarelli Symonds(QS) Subject Topics

Engineering & Technology

Access to Document

10.1149/1.2355815

Cite this

Seo, J. J., Choi, S. S., Yang, H. D., Kim, J. Y., Yang, J. W., Han, T. H., Cho, D. H., & Shim, K. H. (2006). Precise analysis of Si/graded-Si_1-xGe_x/Si _1-xGe_x heterostructure films grown by reduced pressure chemical vapor deposition using spectroscopic ellipsometry. In SiGe and Ge: Materials, Processing, and Devices (7 ed., pp. 231-242). (ECS Transactions; Vol. 3, No. 7). Electrochemical Society Inc.. https://doi.org/10.1149/1.2355815

@inproceedings{fc5d706da84a4dbcb3dd25e9a9932ca4,

title = "Precise analysis of Si/graded-Si1-xGex/Si 1-xGex heterostructure films grown by reduced pressure chemical vapor deposition using spectroscopic ellipsometry",

abstract = "Si/graded-Si1-xGex/Si1-xGex heterostructures were grown by reduced pressure chemical vapor deposition on Si (100)\&(111) substrates at different temperatures, and their structural properties were investigated using spectroscopic ellipsmetry and secondary ion mass spectroscopy. The variation of growth temperature was observed to alter each part of Si/graded-Si1-xGex/Si1-xGe x heterostructure growth, and the changes could be clearly addressed according to the evolutions of ellipsometry spectra. As an in line monitoring tool, the spectroscopic ellipsometry presented excellent capability of accuracy ranging ±1.2°C in substrate temperature and correspondingly <5\% in current gain for heterojunction bipolar transistor with the Si/graded-Si 1-xGex/Si1-xGex base epi layers. copyright The Electrochemical Society.",

author = "Seo, \{J. J.\} and Choi, \{S. S.\} and Yang, \{H. D.\} and Kim, \{J. Y.\} and Yang, \{J. W.\} and Han, \{T. H.\} and Cho, \{D. H.\} and Shim, \{K. H.\}",

year = "2006",

doi = "10.1149/1.2355815",

language = "English",

series = "ECS Transactions",

publisher = "Electrochemical Society Inc.",

number = "7",

pages = "231--242",

booktitle = "SiGe and Ge",

edition = "7",

note = "SiGe and Ge: Materials, Processing, and Devices - 210th Electrochemical Society Meeting ; Conference date: 29-10-2006 Through 03-11-2006",

}

Seo, JJ, Choi, SS, Yang, HD, Kim, JY, Yang, JW, Han, TH, Cho, DH & Shim, KH 2006, Precise analysis of Si/graded-Si_1-xGe_x/Si _1-xGe_x heterostructure films grown by reduced pressure chemical vapor deposition using spectroscopic ellipsometry. in SiGe and Ge: Materials, Processing, and Devices. 7 edn, ECS Transactions, no. 7, vol. 3, Electrochemical Society Inc., pp. 231-242, SiGe and Ge: Materials, Processing, and Devices - 210th Electrochemical Society Meeting, Cancun, Mexico, 06.10.29. https://doi.org/10.1149/1.2355815

Precise analysis of Si/graded-Si_1-xGe_x/Si _1-xGe_x heterostructure films grown by reduced pressure chemical vapor deposition using spectroscopic ellipsometry. / Seo, J. J.; Choi, S. S.; Yang, H. D. et al.
SiGe and Ge: Materials, Processing, and Devices. 7. ed. Electrochemical Society Inc., 2006. p. 231-242 (ECS Transactions; Vol. 3, No. 7).

Research output: Contribution to conference › Conference paper › peer-review

TY - GEN

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AU - Seo, J. J.

AU - Choi, S. S.

AU - Yang, H. D.

AU - Kim, J. Y.

AU - Yang, J. W.

AU - Han, T. H.

AU - Cho, D. H.

AU - Shim, K. H.

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N2 - Si/graded-Si1-xGex/Si1-xGex heterostructures were grown by reduced pressure chemical vapor deposition on Si (100)&(111) substrates at different temperatures, and their structural properties were investigated using spectroscopic ellipsmetry and secondary ion mass spectroscopy. The variation of growth temperature was observed to alter each part of Si/graded-Si1-xGex/Si1-xGe x heterostructure growth, and the changes could be clearly addressed according to the evolutions of ellipsometry spectra. As an in line monitoring tool, the spectroscopic ellipsometry presented excellent capability of accuracy ranging ±1.2°C in substrate temperature and correspondingly <5% in current gain for heterojunction bipolar transistor with the Si/graded-Si 1-xGex/Si1-xGex base epi layers. copyright The Electrochemical Society.

AB - Si/graded-Si1-xGex/Si1-xGex heterostructures were grown by reduced pressure chemical vapor deposition on Si (100)&(111) substrates at different temperatures, and their structural properties were investigated using spectroscopic ellipsmetry and secondary ion mass spectroscopy. The variation of growth temperature was observed to alter each part of Si/graded-Si1-xGex/Si1-xGe x heterostructure growth, and the changes could be clearly addressed according to the evolutions of ellipsometry spectra. As an in line monitoring tool, the spectroscopic ellipsometry presented excellent capability of accuracy ranging ±1.2°C in substrate temperature and correspondingly <5% in current gain for heterojunction bipolar transistor with the Si/graded-Si 1-xGex/Si1-xGex base epi layers. copyright The Electrochemical Society.

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