Preferential regrowth of indium-tin oxide (ITO) films deposited on GaN (0001) by rf-magnetron sputter

K. H. Shim; M. C. Paek; B. T. Lee; C. Kim; J. Y. Kang

doi:10.1007/s003390100787

Preferential regrowth of indium-tin oxide (ITO) films deposited on GaN (0001) by rf-magnetron sputter

K. H. Shim^*
, M. C. Paek
, B. T. Lee
, C. Kim
, J. Y. Kang

^*Corresponding author for this work

Department of Semiconductor Science and Technology

Electronics and Telecommunications Research Institute
Chonnam National University
LG Corporation

Research output: Contribution to journal › Journal article › peer-review

13 Scopus citations

Abstract

Effects of thermal treatments on the electrical properties and microstructures of indium-tin oxide (ITO)/GaN contacts have been investigated using a rf-magnetron sputter deposition followed by rapid thermal annealing. ITO films annealed at 800°C revealed Schottky contact characteristics with a barrier height corresponding to ITO's work function of 4.62 eV. The evolution of electrical properties of ITO/GaN contacts was attributed to the preferential regrowth of In₂O₃ (222)//GaN (0001) with an ideal metal-semiconductor Schottky contact. The feasible use of ITO/GaN as a transparent Schottky contact would be realized by the enhanced regrowth of In₂O₃ at high temperature.

Original language	English
Pages (from-to)	471-474
Number of pages	4
Journal	Applied Physics A: Materials Science and Processing
Volume	72
Issue number	4
DOIs	https://doi.org/10.1007/s003390100787
State	Published - 2001

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@article{c8ee3d8bdeee45909e61696aed20f073,

title = "Preferential regrowth of indium-tin oxide (ITO) films deposited on GaN (0001) by rf-magnetron sputter",

abstract = "Effects of thermal treatments on the electrical properties and microstructures of indium-tin oxide (ITO)/GaN contacts have been investigated using a rf-magnetron sputter deposition followed by rapid thermal annealing. ITO films annealed at 800°C revealed Schottky contact characteristics with a barrier height corresponding to ITO's work function of 4.62 eV. The evolution of electrical properties of ITO/GaN contacts was attributed to the preferential regrowth of In2O3 (222)//GaN (0001) with an ideal metal-semiconductor Schottky contact. The feasible use of ITO/GaN as a transparent Schottky contact would be realized by the enhanced regrowth of In2O3 at high temperature.",

author = "Shim, \{K. H.\} and Paek, \{M. C.\} and Lee, \{B. T.\} and C. Kim and Kang, \{J. Y.\}",

year = "2001",

doi = "10.1007/s003390100787",

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pages = "471--474",

journal = "Applied Physics A: Materials Science and Processing",

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TY - JOUR

T1 - Preferential regrowth of indium-tin oxide (ITO) films deposited on GaN (0001) by rf-magnetron sputter

AU - Shim, K. H.

AU - Paek, M. C.

AU - Lee, B. T.

AU - Kim, C.

AU - Kang, J. Y.

PY - 2001

Y1 - 2001

N2 - Effects of thermal treatments on the electrical properties and microstructures of indium-tin oxide (ITO)/GaN contacts have been investigated using a rf-magnetron sputter deposition followed by rapid thermal annealing. ITO films annealed at 800°C revealed Schottky contact characteristics with a barrier height corresponding to ITO's work function of 4.62 eV. The evolution of electrical properties of ITO/GaN contacts was attributed to the preferential regrowth of In2O3 (222)//GaN (0001) with an ideal metal-semiconductor Schottky contact. The feasible use of ITO/GaN as a transparent Schottky contact would be realized by the enhanced regrowth of In2O3 at high temperature.

AB - Effects of thermal treatments on the electrical properties and microstructures of indium-tin oxide (ITO)/GaN contacts have been investigated using a rf-magnetron sputter deposition followed by rapid thermal annealing. ITO films annealed at 800°C revealed Schottky contact characteristics with a barrier height corresponding to ITO's work function of 4.62 eV. The evolution of electrical properties of ITO/GaN contacts was attributed to the preferential regrowth of In2O3 (222)//GaN (0001) with an ideal metal-semiconductor Schottky contact. The feasible use of ITO/GaN as a transparent Schottky contact would be realized by the enhanced regrowth of In2O3 at high temperature.

UR - https://www.scopus.com/pages/publications/0034969613

U2 - 10.1007/s003390100787

DO - 10.1007/s003390100787

M3 - Journal article

AN - SCOPUS:0034969613

SN - 0947-8396

VL - 72

SP - 471

EP - 474

JO - Applied Physics A: Materials Science and Processing

JF - Applied Physics A: Materials Science and Processing

IS - 4

ER -

Preferential regrowth of indium-tin oxide (ITO) films deposited on GaN (0001) by rf-magnetron sputter

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