Preparation and structural characteristics of ZrTiO4 thin films by plasma enhanced chemical vapor deposition

Won Gyu Lee; O. Bong Yang

doi:10.1023/B:JMSL.0000004647.81141.c3

Preparation and structural characteristics of ZrTiO₄ thin films by plasma enhanced chemical vapor deposition

Won Gyu Lee^*
, O. Bong Yang

^*Corresponding author for this work

Division of Chemical Engineering

Kangwon National University

Research output: Contribution to journal › Journal article › peer-review

1 Scopus citations

Abstract

The stoichiometric control and crystalline characteristics of ZrTiO ₄ thin films prepared by plasma enhanced chemical vapor deposition, were studied. Post-deposition annealing of ZrTiO₄ thin films was performed using a horizontal furnace and appropriate conditions. The film composition was analyzed using an energy dispersive X-ray analyzer (EDX or wavelength dispersive X-ray analyzer (WDX). Results indicated that the crystalline behavior of ZrTiO₄ thin films strongly depended on the stoichiometric ratio of Zr/Ti in the film.

Original language	English
Pages (from-to)	1679-1680
Number of pages	2
Journal	Journal of Materials Science Letters
Volume	22
Issue number	23
DOIs	https://doi.org/10.1023/B:JMSL.0000004647.81141.c3
State	Published - 2003.12.1

Quacquarelli Symonds(QS) Subject Topics

Materials Science

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10.1023/B:JMSL.0000004647.81141.c3

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title = "Preparation and structural characteristics of ZrTiO4 thin films by plasma enhanced chemical vapor deposition",

abstract = "The stoichiometric control and crystalline characteristics of ZrTiO 4 thin films prepared by plasma enhanced chemical vapor deposition, were studied. Post-deposition annealing of ZrTiO4 thin films was performed using a horizontal furnace and appropriate conditions. The film composition was analyzed using an energy dispersive X-ray analyzer (EDX or wavelength dispersive X-ray analyzer (WDX). Results indicated that the crystalline behavior of ZrTiO4 thin films strongly depended on the stoichiometric ratio of Zr/Ti in the film.",

author = "Lee, \{Won Gyu\} and Yang, \{O. Bong\}",

year = "2003",

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T1 - Preparation and structural characteristics of ZrTiO4 thin films by plasma enhanced chemical vapor deposition

AU - Lee, Won Gyu

AU - Yang, O. Bong

PY - 2003/12/1

Y1 - 2003/12/1

N2 - The stoichiometric control and crystalline characteristics of ZrTiO 4 thin films prepared by plasma enhanced chemical vapor deposition, were studied. Post-deposition annealing of ZrTiO4 thin films was performed using a horizontal furnace and appropriate conditions. The film composition was analyzed using an energy dispersive X-ray analyzer (EDX or wavelength dispersive X-ray analyzer (WDX). Results indicated that the crystalline behavior of ZrTiO4 thin films strongly depended on the stoichiometric ratio of Zr/Ti in the film.

AB - The stoichiometric control and crystalline characteristics of ZrTiO 4 thin films prepared by plasma enhanced chemical vapor deposition, were studied. Post-deposition annealing of ZrTiO4 thin films was performed using a horizontal furnace and appropriate conditions. The film composition was analyzed using an energy dispersive X-ray analyzer (EDX or wavelength dispersive X-ray analyzer (WDX). Results indicated that the crystalline behavior of ZrTiO4 thin films strongly depended on the stoichiometric ratio of Zr/Ti in the film.

UR - https://www.scopus.com/pages/publications/0346331425

U2 - 10.1023/B:JMSL.0000004647.81141.c3

DO - 10.1023/B:JMSL.0000004647.81141.c3

M3 - Journal article

AN - SCOPUS:0346331425

SN - 0261-8028

VL - 22

SP - 1679

EP - 1680

JO - Journal of Materials Science Letters

JF - Journal of Materials Science Letters

IS - 23

ER -

Preparation and structural characteristics of ZrTiO₄ thin films by plasma enhanced chemical vapor deposition

Abstract

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