Preparation of crystalline Si1-xGex thin films by pulsed ion-beam evaporation

Hisayuki Suematsu; Ryuma Iwashita; Tsunetoshi Arikado; Naotaka Uchitomi; S. C. Yang; Weihua Jiang; Kiyoshi Yatsui

doi:10.1063/1.1530886

Preparation of crystalline Si_1-xGe_x thin films by pulsed ion-beam evaporation

Hisayuki Suematsu^*
, Ryuma Iwashita
, Tsunetoshi Arikado
, Naotaka Uchitomi
, S. C. Yang
, Weihua Jiang
, Kiyoshi Yatsui

^*Corresponding author for this work

Department of Electrical Engineering

Nagaoka University of Technology

Research output: Contribution to conference › Conference paper › peer-review

Abstract

Thin films of single phase, polycrystalline silicon germanium (Si _1-xGe_x) were prepared by ion-beam evaporation (IBE) using Si-Ge multi-phase targets. After the irradiation of the targets by an pulsed light ion beam with peak energy of 1 MV, 450 and 480 nm thick films were deposited on Si single crystal and quartz glass substrates, respectively. From XRD analysis, the thin films consisted of a single phase Si_1-xGe _x, whose composition is close to those of the targets.

Original language	English
Title of host publication	BEAMS 2002 - 14th International Conference on High-Power Particle Beams
Publisher	IEEE Computer Society
Pages	417-420
Number of pages	4
ISBN (Print)	9780735401075
DOIs	https://doi.org/10.1063/1.1530886
State	Published - 2002
Event	14th International Conference on High-Power Particle Beams, BEAMS 2002 and the 5th International Conference on Dense Z-Pinches, DZP 2002 - Albuquerque, NM, United States Duration: 2002.06.23 → 2002.06.28

Publication series

Name	BEAMS 2002 - 14th International Conference on High-Power Particle Beams
Volume	1

Conference

Conference	14th International Conference on High-Power Particle Beams, BEAMS 2002 and the 5th International Conference on Dense Z-Pinches, DZP 2002
Country/Territory	United States
City	Albuquerque, NM
Period	02.06.23 → 02.06.28

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Access to Document

10.1063/1.1530886

Cite this

Suematsu, H., Iwashita, R., Arikado, T., Uchitomi, N., Yang, S. C., Jiang, W., & Yatsui, K. (2002). Preparation of crystalline Si_1-xGe_x thin films by pulsed ion-beam evaporation. In BEAMS 2002 - 14th International Conference on High-Power Particle Beams (pp. 417-420). Article 6219477 (BEAMS 2002 - 14th International Conference on High-Power Particle Beams; Vol. 1). IEEE Computer Society. https://doi.org/10.1063/1.1530886

@inproceedings{7849c81cbaae4974ae5a94d13a1e1646,

title = "Preparation of crystalline Si1-xGex thin films by pulsed ion-beam evaporation",

abstract = "Thin films of single phase, polycrystalline silicon germanium (Si 1-xGex) were prepared by ion-beam evaporation (IBE) using Si-Ge multi-phase targets. After the irradiation of the targets by an pulsed light ion beam with peak energy of 1 MV, 450 and 480 nm thick films were deposited on Si single crystal and quartz glass substrates, respectively. From XRD analysis, the thin films consisted of a single phase Si1-xGe x, whose composition is close to those of the targets.",

author = "Hisayuki Suematsu and Ryuma Iwashita and Tsunetoshi Arikado and Naotaka Uchitomi and Yang, \{S. C.\} and Weihua Jiang and Kiyoshi Yatsui",

year = "2002",

doi = "10.1063/1.1530886",

language = "English",

isbn = "9780735401075",

series = "BEAMS 2002 - 14th International Conference on High-Power Particle Beams",

publisher = "IEEE Computer Society",

pages = "417--420",

booktitle = "BEAMS 2002 - 14th International Conference on High-Power Particle Beams",

note = "14th International Conference on High-Power Particle Beams, BEAMS 2002 and the 5th International Conference on Dense Z-Pinches, DZP 2002 ; Conference date: 23-06-2002 Through 28-06-2002",

}

Suematsu, H, Iwashita, R, Arikado, T, Uchitomi, N, Yang, SC, Jiang, W & Yatsui, K 2002, Preparation of crystalline Si_1-xGe_x thin films by pulsed ion-beam evaporation. in BEAMS 2002 - 14th International Conference on High-Power Particle Beams., 6219477, BEAMS 2002 - 14th International Conference on High-Power Particle Beams, vol. 1, IEEE Computer Society, pp. 417-420, 14th International Conference on High-Power Particle Beams, BEAMS 2002 and the 5th International Conference on Dense Z-Pinches, DZP 2002, Albuquerque, NM, United States, 02.06.23. https://doi.org/10.1063/1.1530886

Preparation of crystalline Si_1-xGe_x thin films by pulsed ion-beam evaporation. / Suematsu, Hisayuki; Iwashita, Ryuma; Arikado, Tsunetoshi et al.
BEAMS 2002 - 14th International Conference on High-Power Particle Beams. IEEE Computer Society, 2002. p. 417-420 6219477 (BEAMS 2002 - 14th International Conference on High-Power Particle Beams; Vol. 1).

Research output: Contribution to conference › Conference paper › peer-review

TY - GEN

T1 - Preparation of crystalline Si1-xGex thin films by pulsed ion-beam evaporation

AU - Suematsu, Hisayuki

AU - Iwashita, Ryuma

AU - Arikado, Tsunetoshi

AU - Uchitomi, Naotaka

AU - Yang, S. C.

AU - Jiang, Weihua

AU - Yatsui, Kiyoshi

PY - 2002

Y1 - 2002

N2 - Thin films of single phase, polycrystalline silicon germanium (Si 1-xGex) were prepared by ion-beam evaporation (IBE) using Si-Ge multi-phase targets. After the irradiation of the targets by an pulsed light ion beam with peak energy of 1 MV, 450 and 480 nm thick films were deposited on Si single crystal and quartz glass substrates, respectively. From XRD analysis, the thin films consisted of a single phase Si1-xGe x, whose composition is close to those of the targets.

AB - Thin films of single phase, polycrystalline silicon germanium (Si 1-xGex) were prepared by ion-beam evaporation (IBE) using Si-Ge multi-phase targets. After the irradiation of the targets by an pulsed light ion beam with peak energy of 1 MV, 450 and 480 nm thick films were deposited on Si single crystal and quartz glass substrates, respectively. From XRD analysis, the thin films consisted of a single phase Si1-xGe x, whose composition is close to those of the targets.

UR - https://www.scopus.com/pages/publications/84864966613

U2 - 10.1063/1.1530886

DO - 10.1063/1.1530886

M3 - Conference paper

AN - SCOPUS:84864966613

SN - 9780735401075

T3 - BEAMS 2002 - 14th International Conference on High-Power Particle Beams

SP - 417

EP - 420

BT - BEAMS 2002 - 14th International Conference on High-Power Particle Beams

PB - IEEE Computer Society

T2 - 14th International Conference on High-Power Particle Beams, BEAMS 2002 and the 5th International Conference on Dense Z-Pinches, DZP 2002

Y2 - 23 June 2002 through 28 June 2002

ER -

Suematsu H, Iwashita R, Arikado T, Uchitomi N, Yang SC, Jiang W et al. Preparation of crystalline Si_1-xGe_x thin films by pulsed ion-beam evaporation. In BEAMS 2002 - 14th International Conference on High-Power Particle Beams. IEEE Computer Society. 2002. p. 417-420. 6219477. (BEAMS 2002 - 14th International Conference on High-Power Particle Beams). doi: 10.1063/1.1530886