Preparation of oxygenated fullerene thin film for photoelectric devices

Sung Chae Yang; Tetsu Mieno

doi:10.1143/jjap.40.1067

Preparation of oxygenated fullerene thin film for photoelectric devices

Sung Chae Yang^*
, Tetsu Mieno

^*Corresponding author for this work

Department of Electrical Engineering

Shizuoka University

Research output: Contribution to journal › Journal article › peer-review

15 Scopus citations

Abstract

In order to obtain a higher photocurrent in metal/insulator/semiconductor junction cells, oxygenated fullerene thin films are used as a insulator thin films. Highly oxygenated fullerene thin films are obtained using RF O₂ plasma with a cooling system. The experimental results revealed that oxygenated fullerene thin films, C₆₀O_x (x = 8, 16, 24, 38, 50 etc.), are obtained using a laser-desorption time-of-flight mass spectrometer (TOF-MS). By using the 200 nm an thick multilayer fullerene junction film, the photocurrent becomes 30 times larger than that of a normal fullerene.

Original language	English
Pages (from-to)	1067-1069
Number of pages	3
Journal	Japanese Journal of Applied Physics
Volume	40
Issue number	2 B
DOIs	https://doi.org/10.1143/jjap.40.1067
State	Published - 2001.02

Keywords

Multilayer film
Oxygenated fullerene
Photocurrent
Photoelectric device
RF plasma

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10.1143/jjap.40.1067

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@article{64abe0c75f364e1faf5cfc7ef445cf15,

title = "Preparation of oxygenated fullerene thin film for photoelectric devices",

abstract = "In order to obtain a higher photocurrent in metal/insulator/semiconductor junction cells, oxygenated fullerene thin films are used as a insulator thin films. Highly oxygenated fullerene thin films are obtained using RF O2 plasma with a cooling system. The experimental results revealed that oxygenated fullerene thin films, C60Ox (x = 8, 16, 24, 38, 50 etc.), are obtained using a laser-desorption time-of-flight mass spectrometer (TOF-MS). By using the 200 nm an thick multilayer fullerene junction film, the photocurrent becomes 30 times larger than that of a normal fullerene.",

keywords = "Multilayer film, Oxygenated fullerene, Photocurrent, Photoelectric device, RF plasma",

author = "Yang, \{Sung Chae\} and Tetsu Mieno",

year = "2001",

month = feb,

doi = "10.1143/jjap.40.1067",

language = "English",

volume = "40",

pages = "1067--1069",

journal = "Japanese Journal of Applied Physics",

issn = "0021-4922",

number = "2 B",

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TY - JOUR

T1 - Preparation of oxygenated fullerene thin film for photoelectric devices

AU - Yang, Sung Chae

AU - Mieno, Tetsu

PY - 2001/2

Y1 - 2001/2

N2 - In order to obtain a higher photocurrent in metal/insulator/semiconductor junction cells, oxygenated fullerene thin films are used as a insulator thin films. Highly oxygenated fullerene thin films are obtained using RF O2 plasma with a cooling system. The experimental results revealed that oxygenated fullerene thin films, C60Ox (x = 8, 16, 24, 38, 50 etc.), are obtained using a laser-desorption time-of-flight mass spectrometer (TOF-MS). By using the 200 nm an thick multilayer fullerene junction film, the photocurrent becomes 30 times larger than that of a normal fullerene.

AB - In order to obtain a higher photocurrent in metal/insulator/semiconductor junction cells, oxygenated fullerene thin films are used as a insulator thin films. Highly oxygenated fullerene thin films are obtained using RF O2 plasma with a cooling system. The experimental results revealed that oxygenated fullerene thin films, C60Ox (x = 8, 16, 24, 38, 50 etc.), are obtained using a laser-desorption time-of-flight mass spectrometer (TOF-MS). By using the 200 nm an thick multilayer fullerene junction film, the photocurrent becomes 30 times larger than that of a normal fullerene.

KW - Multilayer film

KW - Oxygenated fullerene

KW - Photocurrent

KW - Photoelectric device

KW - RF plasma

UR - https://www.scopus.com/pages/publications/0035245553

U2 - 10.1143/jjap.40.1067

DO - 10.1143/jjap.40.1067

M3 - Journal article

AN - SCOPUS:0035245553

SN - 0021-4922

VL - 40

SP - 1067

EP - 1069

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 2 B

ER -

Preparation of oxygenated fullerene thin film for photoelectric devices

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