@inproceedings{78fabeb17b354b84b6fd72f28d92ddbd,
title = "Preparation of polycrystalline silicon thin films by pulsed ion-beam evaporation",
abstract = "By intense pulsed ion beam evaporation, we have succeeded in the preparation of polycrystaltine silicon thin films on silicon substrate. High crystallinity and deposition rate have been achieved without heating the substrate. The crystallinity of poly-Si film has been improved with increasing the density of the ablation plasma, where the grain size of the film has been found to be much smaller. To enhance the crystallinity and density of poly-Si thin film, bias voltage was applied to the substrate, where the quality of poly-Si film has been improved by the ion bombardment.",
author = "Yang, \{S. C.\} and T. Suzuki and W. Jiang and K. Yatsui",
note = "Publisher Copyright: {\textcopyright} 2002 IEEE.; 28th IEEE International Conference on Plasma Science and 13th IEEE International Pulsed Power Conference, PPPS 2001 ; Conference date: 17-06-2001 Through 22-06-2001",
year = "2001",
doi = "10.1109/PPPS.2001.1001933",
language = "English",
series = "PPPS 2001 - Pulsed Power Plasma Science 2001",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "1842--1845",
editor = "Robert Reinovsky and Mark Newton",
booktitle = "PPPS 2001 - Pulsed Power Plasma Science 2001",
}