Preparation of polycrystalline silicon thin films by pulsed ion-beam evaporation

Using the intense pulsed ion-beam evaporation technique, we have succeeded in the preparation of polycrystalline silicon thin films. Good crystallinity and high deposition rates have been achieved without substrate heating. The crystallinity of poly-Si film has been improved by increasing the density of the ablation plasma. The intense diffraction peaks and high density of poly-Si thin films can be obtained by biasing the substrate.