Process optimization and modeling of the silicon growth in trichlorosilane-hydrogen gas mixture in a planetary CVD reactor

Research output: Contribution to journal › Journal article › peer-review

Original language	Korean
Journal	IEEE Transactions on Semiconductor Manufacturing
State	Published - 2021.02.1

Cite this

@article{c96154457109465f85811d81beb3e613,

title = "Process optimization and modeling of the silicon growth in trichlorosilane-hydrogen gas mixture in a planetary CVD reactor",

author = "Park, \{Chan Woo\} and Ik-Tae Im",

year = "2021",

month = feb,

day = "1",

language = "Korean",

journal = "IEEE Transactions on Semiconductor Manufacturing",

issn = "0894-6507",

}