Production of fluorinated fullerene film by a CF4 RF plasma

Sung Chae Yang; Tetsu Mieno

doi:10.1016/S0040-6090(00)01675-8

Production of fluorinated fullerene film by a CF₄ RF plasma

Sung Chae Yang^*
, Tetsu Mieno

^*Corresponding author for this work

Department of Electrical Engineering

Shizuoka University

Research output: Contribution to journal › Conference article › peer-review

1 Scopus citations

Abstract

In order to prepare highly fluorinated fullerene, C₆₀F_x, film and to realize the perfluorination of fullerene film as C₆₀F₆₀, RF CF₄ plasma is used. From the experimental results, it is found that the best condition for preparation of highly fluorinated fullerene is to restrain the rising temperature of the substrate during the fluorination of fullerene film by using the cooling system and to use ions with lower energy by using the lower input power and symmetric structure of electrodes. In this study, fluorinated fullerene films with double shaped distribution as two peaks at C₆₀F₁₄ and C₆₀F₄₃ was obtained, and the strong intensity at around C₆₀F₆₀ is also detected by using RF CF₄ plasma with cooling system.

Original language	English
Pages (from-to)	286-290
Number of pages	5
Journal	Thin Solid Films
Volume	386
Issue number	2
DOIs	https://doi.org/10.1016/S0040-6090(00)01675-8
State	Published - 2001.05.15
Event	12th Symposium on Plasma Science for Materials - Tokyo, Japan Duration: 2001.06.16 → 2001.06.17

Keywords

Fluorinated fullerene
RF plasma
Substrate temperature

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10.1016/S0040-6090(00)01675-8

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@article{eaddc007bb554971b0b4021f513b3954,

title = "Production of fluorinated fullerene film by a CF4 RF plasma",

abstract = "In order to prepare highly fluorinated fullerene, C60Fx, film and to realize the perfluorination of fullerene film as C60F60, RF CF4 plasma is used. From the experimental results, it is found that the best condition for preparation of highly fluorinated fullerene is to restrain the rising temperature of the substrate during the fluorination of fullerene film by using the cooling system and to use ions with lower energy by using the lower input power and symmetric structure of electrodes. In this study, fluorinated fullerene films with double shaped distribution as two peaks at C60F14 and C60F43 was obtained, and the strong intensity at around C60F60 is also detected by using RF CF4 plasma with cooling system.",

keywords = "Fluorinated fullerene, RF plasma, Substrate temperature",

author = "Yang, \{Sung Chae\} and Tetsu Mieno",

year = "2001",

month = may,

day = "15",

doi = "10.1016/S0040-6090(00)01675-8",

language = "English",

volume = "386",

pages = "286--290",

journal = "Thin Solid Films",

issn = "0040-6090",

number = "2",

note = "12th Symposium on Plasma Science for Materials ; Conference date: 16-06-2001 Through 17-06-2001",

}

TY - JOUR

T1 - Production of fluorinated fullerene film by a CF4 RF plasma

AU - Yang, Sung Chae

AU - Mieno, Tetsu

PY - 2001/5/15

Y1 - 2001/5/15

N2 - In order to prepare highly fluorinated fullerene, C60Fx, film and to realize the perfluorination of fullerene film as C60F60, RF CF4 plasma is used. From the experimental results, it is found that the best condition for preparation of highly fluorinated fullerene is to restrain the rising temperature of the substrate during the fluorination of fullerene film by using the cooling system and to use ions with lower energy by using the lower input power and symmetric structure of electrodes. In this study, fluorinated fullerene films with double shaped distribution as two peaks at C60F14 and C60F43 was obtained, and the strong intensity at around C60F60 is also detected by using RF CF4 plasma with cooling system.

AB - In order to prepare highly fluorinated fullerene, C60Fx, film and to realize the perfluorination of fullerene film as C60F60, RF CF4 plasma is used. From the experimental results, it is found that the best condition for preparation of highly fluorinated fullerene is to restrain the rising temperature of the substrate during the fluorination of fullerene film by using the cooling system and to use ions with lower energy by using the lower input power and symmetric structure of electrodes. In this study, fluorinated fullerene films with double shaped distribution as two peaks at C60F14 and C60F43 was obtained, and the strong intensity at around C60F60 is also detected by using RF CF4 plasma with cooling system.

KW - Fluorinated fullerene

KW - RF plasma

KW - Substrate temperature

UR - https://www.scopus.com/pages/publications/0035874144

U2 - 10.1016/S0040-6090(00)01675-8

DO - 10.1016/S0040-6090(00)01675-8

M3 - Conference article

AN - SCOPUS:0035874144

SN - 0040-6090

VL - 386

SP - 286

EP - 290

JO - Thin Solid Films

JF - Thin Solid Films

IS - 2

T2 - 12th Symposium on Plasma Science for Materials

Y2 - 16 June 2001 through 17 June 2001

ER -

Production of fluorinated fullerene film by a CF₄ RF plasma

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Keywords

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