Pulsed ion beam evaporation at low temperature for the preparation of thin films

K. Yatsui; H. Suematsu; S. C. Yang; R. Iwashita; T. Nagahama; N. Uchitomi; W. Jiang; T. Arikado

Pulsed ion beam evaporation at low temperature for the preparation of thin films

K. Yatsui^*
, H. Suematsu
, S. C. Yang
, R. Iwashita
, T. Nagahama
, N. Uchitomi
, W. Jiang
, T. Arikado

^*Corresponding author for this work

Department of Electrical Engineering

Nagaoka University of Technology

Research output: Contribution to journal › Conference article › peer-review

Abstract

Using high-density ablation plasma produced by pulsed ion beam interaction with solid targets, it has been demonstrated by the present authors to prepare thin films at low temperature, which was called ion beam evaporation. In addition to the first preparation of ZnS in 1988, the preparation of many films has been succeeded such as YBCO, (Sr,Ba)TiO₃, SrAl₂O₄:Eu, poly-Si, ITO, and apatite. Since some of them has been already reported elsewhere, some other new results of the preparation of thin films by IBE will be presented such as Si-Ge or HfO₂.

Original language	English
Pages (from-to)	540-543
Number of pages	4
Journal	IEEE Conference Record of Power Modulator Symposium
State	Published - 2002
Event	Conference Record of the Twenty-Fifth International Power Modulator Symposium and 2002 High-Voltage Workshop - Hollywood, CA, United States Duration: 2002.06.30 → 2002.07.3

Cite this

@article{60774194eeea4143868be43be6412db3,

title = "Pulsed ion beam evaporation at low temperature for the preparation of thin films",

abstract = "Using high-density ablation plasma produced by pulsed ion beam interaction with solid targets, it has been demonstrated by the present authors to prepare thin films at low temperature, which was called ion beam evaporation. In addition to the first preparation of ZnS in 1988, the preparation of many films has been succeeded such as YBCO, (Sr,Ba)TiO3, SrAl2O4:Eu, poly-Si, ITO, and apatite. Since some of them has been already reported elsewhere, some other new results of the preparation of thin films by IBE will be presented such as Si-Ge or HfO2.",

author = "K. Yatsui and H. Suematsu and Yang, \{S. C.\} and R. Iwashita and T. Nagahama and N. Uchitomi and W. Jiang and T. Arikado",

year = "2002",

language = "English",

pages = "540--543",

journal = "IEEE Conference Record of Power Modulator Symposium",

issn = "1076-8467",

note = "Conference Record of the Twenty-Fifth International Power Modulator Symposium and 2002 High-Voltage Workshop ; Conference date: 30-06-2002 Through 03-07-2002",

}

TY - JOUR

T1 - Pulsed ion beam evaporation at low temperature for the preparation of thin films

AU - Yatsui, K.

AU - Suematsu, H.

AU - Yang, S. C.

AU - Iwashita, R.

AU - Nagahama, T.

AU - Uchitomi, N.

AU - Jiang, W.

AU - Arikado, T.

PY - 2002

Y1 - 2002

N2 - Using high-density ablation plasma produced by pulsed ion beam interaction with solid targets, it has been demonstrated by the present authors to prepare thin films at low temperature, which was called ion beam evaporation. In addition to the first preparation of ZnS in 1988, the preparation of many films has been succeeded such as YBCO, (Sr,Ba)TiO3, SrAl2O4:Eu, poly-Si, ITO, and apatite. Since some of them has been already reported elsewhere, some other new results of the preparation of thin films by IBE will be presented such as Si-Ge or HfO2.

AB - Using high-density ablation plasma produced by pulsed ion beam interaction with solid targets, it has been demonstrated by the present authors to prepare thin films at low temperature, which was called ion beam evaporation. In addition to the first preparation of ZnS in 1988, the preparation of many films has been succeeded such as YBCO, (Sr,Ba)TiO3, SrAl2O4:Eu, poly-Si, ITO, and apatite. Since some of them has been already reported elsewhere, some other new results of the preparation of thin films by IBE will be presented such as Si-Ge or HfO2.

UR - https://www.scopus.com/pages/publications/0037001466

M3 - Conference article

AN - SCOPUS:0037001466

SN - 1076-8467

SP - 540

EP - 543

JO - IEEE Conference Record of Power Modulator Symposium

JF - IEEE Conference Record of Power Modulator Symposium

T2 - Conference Record of the Twenty-Fifth International Power Modulator Symposium and 2002 High-Voltage Workshop

Y2 - 30 June 2002 through 3 July 2002

ER -

Pulsed ion beam evaporation at low temperature for the preparation of thin films

Abstract

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