Pulsed laser ablation synthesis and characterization of ferroelectric SrBi ₂Ta ₂O ₉ thin films

Polycrystalline SrBi ₂Ta ₂O ₉ ferroelectric thin films were grown on Pt/Ti/SiO ₂/Si substrates using pulsed laser deposition. The effects of processing parameters such as annealing temperature, annealing time, and laser fluence were studied. The optimal condition to obtain high quality films with good electrical properties was that the annealing temperature, annealing time, and laser fluence are 700°C, 1 h, and 1.2 J/cm ², respectively. Among them, the choice of an optimal laser fluence was found to be very important to control electrical properties of the films. In a narrow fluence range of 1.0-1.5 J/cm ², films with large remnant polarizations could be obtained.