Quantitative Analysis of Trap Behaviors for Deuterium Annealing Effect on IGZO TFTs by TCAD and Experimental Characterization

Hyeonjun Song; Soon Joo Yoon; Jaewook Yoo; Seongbin Lim; Ja Yun Ku; Tae Hyun Kil; Hongseung Lee; Jo Hak Jeong; Soyeon Kim; Moon Kwon Lee; Hyeon Sik Jang; Kiyoung Lee; Keun Heo; Jun Young Park; Yoon Kyeung Lee; Hagyoul Bae

doi:10.1109/TED.2025.3529399

Quantitative Analysis of Trap Behaviors for Deuterium Annealing Effect on IGZO TFTs by TCAD and Experimental Characterization

Hyeonjun Song
, Soon Joo Yoon
, Jaewook Yoo
, Seongbin Lim
, Ja Yun Ku
, Tae Hyun Kil
, Hongseung Lee
, Jo Hak Jeong
, Soyeon Kim
, Moon Kwon Lee
, Hyeon Sik Jang
, Kiyoung Lee
, Keun Heo
, Jun Young Park
, Yoon Kyeung Lee^*
, Hagyoul Bae^*

^*Corresponding author for this work

Jeonbuk National University
Chungbuk National University
Hongik University

Research output: Contribution to journal › Journal article › peer-review

4 Scopus citations

Abstract

In this article, we investigate the effect of annealing in deuterium (D₂) ambient on the performance and reliability of InGaZnO (IGZO) thin-film transistors (TFTs). We examined the current-voltage (I–V) characteristics, as well as the on-state current (I_on), off-state current (I_off), and subthreshold slope (SS) under three different conditions: after device fabrication (as-fabricated), in a deteriorated state (after 7 days), and after D₂ annealing. To analyze the reliability of IGZO TFTs, the oxygen vacancy (V_O) behavior was observed by extracting the subgap density of state (DOS) using I–V data. Quantitative and qualitative analyses of the changes in ion distribution inside the IGZO channel after D2 annealing were performed by X-ray photoelectron spectroscopy (XPS) and secondary-ion mass spectrometry (SIMS), respectively, both of which verified the effect of the D₂ annealing. The validity of our results was further verified by comparing them to model parameters generated using a technology computer-aided design (TCAD) simulation.

Original language	English
Pages (from-to)	1180-1183
Number of pages	4
Journal	IEEE Transactions on Electron Devices
Volume	72
Issue number	3
DOIs	https://doi.org/10.1109/TED.2025.3529399
State	Published - 2025

Keywords

Annealing
InGaZnO (IGZO)
deuterium
oxygen vacancy
subgap density of states (DOS)

Quacquarelli Symonds(QS) Subject Topics

Materials Science
Engineering - Electrical & Electronic
Engineering - Petroleum

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10.1109/TED.2025.3529399

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Song, H., Yoon, S. J., Yoo, J., Lim, S., Ku, J. Y., Kil, T. H., Lee, H., Jeong, J. H., Kim, S., Lee, M. K., Jang, H. S., Lee, K., Heo, K., Park, J. Y., Lee, Y. K., & Bae, H. (2025). Quantitative Analysis of Trap Behaviors for Deuterium Annealing Effect on IGZO TFTs by TCAD and Experimental Characterization. IEEE Transactions on Electron Devices, 72(3), 1180-1183. https://doi.org/10.1109/TED.2025.3529399

@article{2d3295dfd32a49ecabe85453f5acad8d,

title = "Quantitative Analysis of Trap Behaviors for Deuterium Annealing Effect on IGZO TFTs by TCAD and Experimental Characterization",

abstract = "In this article, we investigate the effect of annealing in deuterium (D2) ambient on the performance and reliability of InGaZnO (IGZO) thin-film transistors (TFTs). We examined the current-voltage (I–V) characteristics, as well as the on-state current (Ion), off-state current (Ioff), and subthreshold slope (SS) under three different conditions: after device fabrication (as-fabricated), in a deteriorated state (after 7 days), and after D2 annealing. To analyze the reliability of IGZO TFTs, the oxygen vacancy (VO) behavior was observed by extracting the subgap density of state (DOS) using I–V data. Quantitative and qualitative analyses of the changes in ion distribution inside the IGZO channel after D2 annealing were performed by X-ray photoelectron spectroscopy (XPS) and secondary-ion mass spectrometry (SIMS), respectively, both of which verified the effect of the D2 annealing. The validity of our results was further verified by comparing them to model parameters generated using a technology computer-aided design (TCAD) simulation.",

keywords = "Annealing, InGaZnO (IGZO), deuterium, oxygen vacancy, subgap density of states (DOS)",

author = "Hyeonjun Song and Yoon, \{Soon Joo\} and Jaewook Yoo and Seongbin Lim and Ku, \{Ja Yun\} and Kil, \{Tae Hyun\} and Hongseung Lee and Jeong, \{Jo Hak\} and Soyeon Kim and Lee, \{Moon Kwon\} and Jang, \{Hyeon Sik\} and Kiyoung Lee and Keun Heo and Park, \{Jun Young\} and Lee, \{Yoon Kyeung\} and Hagyoul Bae",

year = "2025",

doi = "10.1109/TED.2025.3529399",

language = "English",

volume = "72",

pages = "1180--1183",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

number = "3",

}

Song, H, Yoon, SJ, Yoo, J, Lim, S, Ku, JY, Kil, TH, Lee, H, Jeong, JH, Kim, S, Lee, MK, Jang, HS, Lee, K, Heo, K, Park, JY, Lee, YK & Bae, H 2025, 'Quantitative Analysis of Trap Behaviors for Deuterium Annealing Effect on IGZO TFTs by TCAD and Experimental Characterization', IEEE Transactions on Electron Devices, vol. 72, no. 3, pp. 1180-1183. https://doi.org/10.1109/TED.2025.3529399

TY - JOUR

T1 - Quantitative Analysis of Trap Behaviors for Deuterium Annealing Effect on IGZO TFTs by TCAD and Experimental Characterization

AU - Song, Hyeonjun

AU - Yoon, Soon Joo

AU - Yoo, Jaewook

AU - Lim, Seongbin

AU - Ku, Ja Yun

AU - Kil, Tae Hyun

AU - Lee, Hongseung

AU - Jeong, Jo Hak

AU - Kim, Soyeon

AU - Lee, Moon Kwon

AU - Jang, Hyeon Sik

AU - Lee, Kiyoung

AU - Heo, Keun

AU - Park, Jun Young

AU - Lee, Yoon Kyeung

AU - Bae, Hagyoul

PY - 2025

Y1 - 2025

N2 - In this article, we investigate the effect of annealing in deuterium (D2) ambient on the performance and reliability of InGaZnO (IGZO) thin-film transistors (TFTs). We examined the current-voltage (I–V) characteristics, as well as the on-state current (Ion), off-state current (Ioff), and subthreshold slope (SS) under three different conditions: after device fabrication (as-fabricated), in a deteriorated state (after 7 days), and after D2 annealing. To analyze the reliability of IGZO TFTs, the oxygen vacancy (VO) behavior was observed by extracting the subgap density of state (DOS) using I–V data. Quantitative and qualitative analyses of the changes in ion distribution inside the IGZO channel after D2 annealing were performed by X-ray photoelectron spectroscopy (XPS) and secondary-ion mass spectrometry (SIMS), respectively, both of which verified the effect of the D2 annealing. The validity of our results was further verified by comparing them to model parameters generated using a technology computer-aided design (TCAD) simulation.

AB - In this article, we investigate the effect of annealing in deuterium (D2) ambient on the performance and reliability of InGaZnO (IGZO) thin-film transistors (TFTs). We examined the current-voltage (I–V) characteristics, as well as the on-state current (Ion), off-state current (Ioff), and subthreshold slope (SS) under three different conditions: after device fabrication (as-fabricated), in a deteriorated state (after 7 days), and after D2 annealing. To analyze the reliability of IGZO TFTs, the oxygen vacancy (VO) behavior was observed by extracting the subgap density of state (DOS) using I–V data. Quantitative and qualitative analyses of the changes in ion distribution inside the IGZO channel after D2 annealing were performed by X-ray photoelectron spectroscopy (XPS) and secondary-ion mass spectrometry (SIMS), respectively, both of which verified the effect of the D2 annealing. The validity of our results was further verified by comparing them to model parameters generated using a technology computer-aided design (TCAD) simulation.

KW - Annealing

KW - InGaZnO (IGZO)

KW - deuterium

KW - oxygen vacancy

KW - subgap density of states (DOS)

UR - https://www.scopus.com/pages/publications/105001073355

U2 - 10.1109/TED.2025.3529399

DO - 10.1109/TED.2025.3529399

M3 - Journal article

AN - SCOPUS:105001073355

SN - 0018-9383

VL - 72

SP - 1180

EP - 1183

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 3

ER -

Quantitative Analysis of Trap Behaviors for Deuterium Annealing Effect on IGZO TFTs by TCAD and Experimental Characterization

Abstract

Keywords

Quacquarelli Symonds(QS) Subject Topics

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