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Quantitative Defect–Property Correlations in Ti3C2Tx MXenes via Precursor-Controlled Defect Engineering

  • Tufail Hassan
  • , Doyeon Lee
  • , Shabbir Madad Naqvi
  • , Myungjae Kim
  • , Jung Min Oh
  • , Sang Woon Park
  • , Aamir Iqbal
  • , Soo Yeong Cho
  • , Zhiwang Hao
  • , Noushad Hussain
  • , Zubair Khalid
  • , Shakir Zaman
  • , Xiangmeng Kong
  • , Ki Min Roh
  • , Hanjung Kwon*
  • , Chong Min Koo*
  • *Corresponding author for this work
  • Sungkyunkwan University
  • Jeonbuk National University
  • Hyundai Motor Group
  • Swiss Federal Laboratories for Materials Science and Technology (Empa)
  • Korea Institute of Geoscience and Mineral Resources

Research output: Contribution to journalJournal articlepeer-review

Abstract

Titanium vacancies (VTi), carbon vacancies (VC), and substitutional oxygen (SO) defects were precisely tuned in TiC and Ti3AlC2 MAX phases by adjusting C and Al feed ratios, yielding Ti3C2Tx MXenes with systematically varied defect densities. Defect minimization resulted in excellent multifunctional performance, including electrical conductivity of 26,000 S cm−1, thermal conductivity of 57 W m−1 K−1, infrared emissivity of 0.05, EMI shielding of 90.5 dB (at 10 µm), Joule heating of 263 °C (at 1.5 V), and activation energy of 72 kJ mol−1. The defect-minimized MXene exhibited excellent oxidation stability, retaining ~90% optical absorption after 4 months in dilute dispersion (0.02 mg mL−1). This study establishes a comprehensive quantitative framework linking precursor-derived defect structures to electrical, thermal, optical, and environmental stability of MXenes.

Original languageEnglish
Article number264
JournalNano-Micro Letters
Volume18
Issue number1
DOIs
StatePublished - 2026.12

Keywords

  • Defect engineering
  • Defect–property correlation
  • MXenes
  • Oxidation resistance
  • Vacancies and substitutions defects

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